2SD1609 datasheet(1/2 Pages) ISC

部件名	2SD1609

功能描述	isc Silicon NPN Power Transistor

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon NPN Power Transistor

2SD1609

DESCRIPTION

·

High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 160V(Min)

·

Good Linearity of hFE

·

100% avalanche tested

·

Complement to Type 2SB1109

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for low frequency and high-voltage amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

160

V

VCEO

Collector-Emitter Voltage

160

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

0.1

A

PC

Collector Power Dissipation

@ TC=25℃

12.5

W

Collector Power Dissipation

@ Ta=25℃

1.25

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-45~150

℃

类似零件编号 - 2SD1609

制造商	部件名	数据表	功能描述
Hitachi Semiconductor	2SD1609	32Kb / 6P	Silicon NPN Epitaxial
Unisonic Technologies	2SD1609	85Kb / 4P	NPN EPITAXIAL PLANAR TRANSISTOR
Foshan Blue Rocket Elec...	2SD1609	941Kb / 6P	Silicon NPN transistor in a TO-126 Plastic Package.
Unisonic Technologies	2SD1609	89Kb / 4P	NPN EPITAXIAL PLANAR TRANSISTOR

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