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D2398 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 D2398
功能描述  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

D2398 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
2SD2398
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·
High DC Current Gain
: hFE= 1000(Min) @IC= 1A
·
Low Collector Saturation Voltgae-
: VCE(sat)= 1.5V(Max.)@ IC= 1A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Motor，Relay drive
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
ICP
Collector Current-Peak
3
A
PC
Collector Power Dissipation
@ Ta=25℃
2.0
W
Collector Power Dissipation
@ TC=25℃
20
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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