IRF520N datasheet(2/2 Pages) ISC

2 / 2 page

INCHANGE Semiconductor

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isc N-Channel MOSFET Transistor

IRF520N

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID= 0.25mA

100

VGS(th)

Gate Threshold Voltage

VDS= VGS; ID= 0.25mA

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 5.7A

0.2

IGSS

Gate-Body Leakage Current

VGS= ±20V;VDS= 0

100

IDSS

Zero Gate Voltage Drain Current

VDS= 100V; VGS=0

VSD

Forward On-Voltage

IS= 5.7A; VGS=0

1.3

Gfs

Forward Transconductance

VDS≥ 50V；ID= 5.7A

2.7

Ciss*

Input capacitance

VGS=0V

VDS=25V

f=1MHz

3400

Coss*

Output capacitance

260

Crss*

Reverse transfer capacitance

210

td(on)*

Turn-on delay time

VDD=30V

VGS=10V

ID=2A

RG=2.5Ω

RL=15Ω

Tr*

Rise time

td(off)*

Turn-off delay time

Tf*

Fall time

Qg*

Total Gate Charge

ID=30A

VDS=30V

VGS=10V

Qgs*

Gate-Source Charge

Qgd*

Gate-Drain Charge

*:Pulse width≤300us,duty cycle ≤2%

*:Guaranteed by design,not subject to production

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