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71342LA55JG8 数据表(PDF) 7 Page - Integrated Device Technology |
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71342LA55JG8 数据表(HTML) 7 Page - Integrated Device Technology |
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7 / 14 page ![]() 6.42 IDT71342SA/LA High-Speed 4K x 8 Dual-Port Static RAM with Semaphore Industrial and Commercial Temperature Ranges 7 Timing Waveform of Read Cycle No. 1, Either Side(1,2,4) NOTES: 1. Write cycle parameters should be adhered to, in order to ensure proper writing. 2. CEL = CER = VIL. CE"B" = VIL. 3. Port "A" may be either left or right port. Port "B" is the opposite from port "A". Timing Waveform of Read Cycle No. 2, Either Side(1,3) Timing Waveform of Write with Port-to-Port Read(2,3) NOTES: 1. Timing depends on which signal is asserted last, OE or CE. 2. Timing depends on which signal is de-asserted first, OE or CE. 3. R/W = VIH and OE = VIL, unless otherwise noted. 4. Start of valid data depends on which timing becomes effective last; tAOE, tACE, or tAA 5. To access SRAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. tAA is for SRAM Address Access and tSAA is for Semaphore Address Access. tAA or tSAA ADDRESS DATAOUT PREVIOUS DATA VALID DATA VALID tOH tOH tRC 2721 drw 07 2721 drw 08 CE or SEM DATAOUT VALID DATA tPD tAOE tACE OE tHZ tLZ tLZ tPU 50% 50% ICC ISB CURRENT tHZ tSOP (5) tSOP (1) (1) (4) (2) (2) (4) 2721 drw 09 R/ W "A" VALID tWC MATCH VALID MATCH tWP tDW tWDD tDDD ADDR "A" DATAIN "A" DATAOUT "B" ADDR "B" (1) tDH |
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