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71342LA55PFG8 数据表(PDF) 7 Page - Integrated Device Technology

部件名 71342LA55PFG8
功能描述  HIGH SPEED 4K X 8 DUAL-PORT STATIC RAM
PDF  14 Pages
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制造商  IDT [Integrated Device Technology]
网页  http://www.idt.com
标志 IDT - Integrated Device Technology

71342LA55PFG8 数据表(HTML) 7 Page - Integrated Device Technology

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6.42
IDT71342SA/LA
High-Speed 4K x 8 Dual-Port Static RAM with Semaphore
Industrial and Commercial Temperature Ranges
7
Timing Waveform of Read Cycle No. 1, Either Side(1,2,4)
NOTES:
1. Write cycle parameters should be adhered to, in order to ensure proper writing.
2. CEL = CER = VIL. CE"B" = VIL.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
Timing Waveform of Read Cycle No. 2, Either Side(1,3)
Timing Waveform of Write with Port-to-Port Read(2,3)
NOTES:
1. Timing depends on which signal is asserted last, OE or CE.
2. Timing depends on which signal is de-asserted first, OE or CE.
3. R/W = VIH and OE = VIL, unless otherwise noted.
4. Start of valid data depends on which timing becomes effective last; tAOE, tACE, or tAA
5. To access SRAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. tAA is for SRAM Address Access and tSAA is for Semaphore Address Access.
tAA or tSAA
ADDRESS
DATAOUT
PREVIOUS DATA VALID
DATA VALID
tOH
tOH
tRC
2721 drw 07
2721 drw 08
CE or SEM
DATAOUT
VALID DATA
tPD
tAOE
tACE
OE
tHZ
tLZ
tLZ
tPU
50%
50%
ICC
ISB
CURRENT
tHZ
tSOP
(5)
tSOP
(1)
(1)
(4)
(2)
(2)
(4)
2721 drw 09
R/
W "A"
VALID
tWC
MATCH
VALID
MATCH
tWP
tDW
tWDD
tDDD
ADDR "A"
DATAIN "A"
DATAOUT "B"
ADDR "B"
(1)
tDH



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