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71321LA55TFGI 数据表(PDF) 5 Page - Integrated Device Technology

部件名 71321LA55TFGI
功能描述  HIGH SPEED 2K X 8 DUAL-PORT STATIC RAM
PDF  17 Pages
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制造商  IDT [Integrated Device Technology]
网页  http://www.idt.com
标志 IDT - Integrated Device Technology

71321LA55TFGI 数据表(HTML) 5 Page - Integrated Device Technology

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6.42
IDT71321SA/LA and IDT71421SA/LA
High Speed 2K x 8 Dual-Port Static RAM with Interrupts
Industrial and Commercial Temperature Ranges
5
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)
NOTE:
1. At Vcc < 2.0V leakages are undefined.
Data Retention Characteristics (LA Version Only)
NOTES:
1. VCC = 2V, TA = +25°C, and is not production tested.
2. tRC = Read Cycle Time
3. This parameter is guaranteed but not production tested.
Data Retention Waveform
VCC
CE
4.5V
4.5V
DATA RETENTION MODE
tCDR
tR
VIH
VIH
VDR
VDR
2.0V
2691 drw 04
≥
,
Symbol
Parameter
Test Conditions
71321SA
71421SA
71321LA
71421LA
Unit
Min.
Max.
Min.
Max.
|ILI|
Input Leakage Current
(1)
VCC = 5.5V, VIN = 0V to VCC
___
10
___
5µA
|ILO|
Output Leakage Current
(1)
CE = VIH, VOUT = 0V to VCC,
VCC - 5.5V
___
10
___
5µA
VOL
Output Low Voltage (I/O0-I/O7)IOL = 4mA
___
0.4
___
0.4
V
VOL
Open Drain Output
Low Voltage (
BUSY/INT)
IOL = 16mA
___
0.5
___
0.5
V
VOH
Output High Voltage
IOH = -4mA
2.4
___
2.4
___
V
2691 tbl 05
Symbol
Parameter
Test Condition
Min.
Typ.
(1)
Max.
Unit
VDR
VCC for Data Retention
2.0
____
0V
ICCDR
Data Retention Current
VCC = 2.0V,
CE > VCC - 0.2V
COM'L
____
100
1500
µA
VIN > VCC - 0.2V or VIN < 0.2V
IND
____
100
4000
µA
tCDR
(3)
Chip Deselect to Data Retention Time
0
____
____
ns
tR
(3)
Operation Recovery Time
tRC
(2)
____
____
ns
2691 tbl 06



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