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71342LA55PFGI 数据表(PDF) 8 Page - Integrated Device Technology |
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71342LA55PFGI 数据表(HTML) 8 Page - Integrated Device Technology |
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8 / 14 page  6.42 IDT71342SA/LA High-Speed 4K x 8 Dual-Port Static RAM with Semaphore Industrial and Commercial Temperature Ranges 8 AC Electrical Characteristics Over the Operating Temperature Supply Voltage(5) NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization but is not production tested. 3. To access SRAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. 4. The specification for tDH must be met by the device supplying write data to the SRAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 5. 'X' in part number indicates power rating (SA or LA). Symbol Parameter 71342X20 Com'l Only 71342X25 Com'l & Ind 71342X35 Com'l Only Unit Min. Max. Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 20 ____ 25 ____ 35 ____ ns tEW Chip Enable to End-of-Write(3) 15 ____ 20 ____ 30 ____ ns tAW Address Valid to End-of-Write 15 ____ 20 ____ 30 ____ ns tAS Address Set-up Time 0 ____ 0 ____ 0 ____ ns tWP Write Pulse Width 15 ____ 20 ____ 25 ____ ns tWR Write Recovery Time 0 ____ 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 15 ____ 15 ____ 20 ____ ns tHZ Output High-Z Time(1,2) ____ 15 ____ 15 ____ 20 ns tDH Data Hold Time(4) 0 ____ 0 ____ 3 ____ ns tWZ Write Enable to Output in High-Z(1,2) ____ 15 ____ 15 ____ 20 ns tOW Output Active from End-of-Write(1,2,4) 3 ____ 3 ____ 3 ____ ns tSWR SEM Flag Write to Read Time 10 ____ 10 ____ 10 ____ ns tSPS SEM Flag Contention Window 10 ____ 10 ____ 10 ____ ns 2721 tbl 10a Symbol Parameter 71342X45 Com'l Only 71342X55 Com'l Only 71342X70 Com'l Only Unit Min. Max. Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 45 ____ 55 ____ 70 ____ ns tEW Chip Enable to End-of-Write(3) 40 ____ 50 ____ 60 ____ ns tAW Address Valid to End-of-Write 40 ____ 50 ____ 60 ____ ns tAS Address Set-up Time 0 ____ 0 ____ 0 ____ ns tWP Write Pulse Width 40 ____ 50 ____ 60 ____ ns tWR Write Recovery Time 0 ____ 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 20 ____ 25 ____ 30 ____ ns tHZ Output High-Z Time(1,2) ____ 20 ____ 25 ____ 30 ns tDH Data Hold Time(4) 3 ____ 3 ____ 3 ____ ns tWZ Write Enable to Output in High-Z(1,2) ____ 20 ____ 25 ____ 30 ns tOW Output Active from End-of-Write(1,2,4) 3 ____ 3 ____ 3 ____ ns tSWR SEM Flag Write to Read Time 10 ____ 10 ____ 10 ____ ns tSPS SEM Flag Contention Window 10 ____ 10 ____ 10 ____ ns 2721 tbl 10b |
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