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7142LA55FGI8 数据表(PDF) 2 Page - Integrated Device Technology

部件名 7142LA55FGI8
功能描述  HIGH SPEED 2K x 8 DUAL PORT STATIC RAM
PDF  16 Pages
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制造商  IDT [Integrated Device Technology]
网页  http://www.idt.com
标志 IDT - Integrated Device Technology

7142LA55FGI8 数据表(HTML) 2 Page - Integrated Device Technology

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IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Pin Configurations(1,2,3)
NOTES:
1. All VCC pins must be connected to the power supply.
2. All GND pins must be connected to the ground supply.
3. P48-1 package body is approximately .55 in x 2.43 in x .18 in.
C48-2 package body is approximately .62 in x 2.43 in x .15 in.
L48-1 package body is approximately .57 in x .57 in x .68 in.
F48-1 package body is approximately .75 in x .75 in x .11 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
Description
TheIDT7132/IDT7142arehigh-speed2Kx8Dual-PortStaticRAMs.
TheIDT7132isdesignedtobeusedasastand-alone8-bitDual-PortRAM
or as a “MASTER” Dual-Port RAM together with the IDT7142 “SLAVE”
Dual-Portin16-bit-or-morewordwidthsystems.UsingtheIDTMASTER/
SLAVE Dual-Port RAM approach in 16-or-more-bit memory system
applicationsresultsinfull-speed,error-freeoperationwithouttheneedfor
additionaldiscretelogic.
Both devices provide two independent ports with separate control,
address,andl/Opinsthatpermitindependent,asynchronousaccessfor
reads or writes to any location in memory. An automatic power down
feature,controlledbyCEpermitstheon-chipcircuitryofeachporttoenter
a very low standby power mode.
Fabricated using CMOS high-performance technology, these
devices typically operate on only 325mW of power. Low-power (LA)
versions offer battery backup data retention capability, with each Dual-
Port typically consuming 200µW from a 2V battery.
The IDT7132/7142 devices are packaged in a 48-pin sidebraze or
plastic DIPs, 48-pin LCCs, 52-pin PLCCs, and 48-lead flatpacks.
Military grade product is manufactured in compliance with the latest
revision of MIL-PRF-38535 QML, making it ideally suited to military
temperature applications demanding the highest level of performance
and reliability.
Capacitance(1) (TA = +25°C,f = 1.0MHz)
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV represents the interpolated capacitance when the input and output signals
switch from 3V to 0V.
Symbol
Parameter
Conditions(2)
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
11
pF
COUT
Output Capacitance
VOUT = 3dV
11
pF
2692 tbl 00



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