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ICS663MIT 数据表(PDF) 4 Page - Integrated Circuit Systems

部件名 ICS663MIT
功能描述  PLL BUILDING BLOCK
PDF  7 Pages
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制造商  ICST [Integrated Circuit Systems]
网页  http://www.icst.com
标志 ICST - Integrated Circuit Systems

ICS663MIT 数据表(HTML) 4 Page - Integrated Circuit Systems

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PLL BUILDING BLOCK
MDS 663 D
4
Revision 062904
In te gr ated Circuit Systems 525 Ra ce Street, San Jose, CA 9512 6 tel (4 08) 297-1 201 www.icst.com
ICS663
AC Electrical Characteristics
VDD = 3.3 V ±5%, Ambient Temperature -40 to +85
° C, unless stated otherwise
VDD = 5.0 V ±10%, Ambient Temperature -40 to +85
° C, unless stated otherwise
Note 1: Minimum input frequency is limited by loop filter design. 1 kHz is a practical minimum limit.
Thermal Characteristics
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Output Clock Frequency
(from pin CLK)
fCLK
SEL = 1
1
100
MHz
SEL = 0
0.25
25
MHz
Input Clock Frequency
(into pins REFIN or FBIN)
fREF
Note 1
8
MHz
Output Rise Time
tOR
0.8 to 2.0V
1.2
2
ns
Output Fall Time
tOF
2.0 to 0.8V
0.75
1.5
ns
Output Clock Duty Cycle
tDC
At VDD/2
40
50
60
%
Jitter, Absolute peak-to-peak
tJ
250
ps
VCO Gain
KO
200
MHz/V
Charge Pump Current
Icp
2.5
µA
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Output Clock Frequency
(from pin CLK)
fCLK
SEL = 1
1
120
MHz
SEL = 0
0.25
30
MHz
Input Clock Frequency
(into pins REFIN or FBIN)
fREF
Note 1
8
MHz
Output Rise Time
tOR
0.8 to 2.0 V
0.5
1
ns
Output Fall Time
tOF
2.0 to 0.8 V
0.5
1
ns
Output Clock Duty Cycle
tDC
At VDD/2
45
50
55
%
Jitter, Absolute peak-to-peak
tJ
150
ps
VCO Gain
KO
200
MHz/V
Charge Pump Current
Icp
2.5
µA
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Thermal Resistance Junction to
Ambient
θ
JA
Still air
150
°C/W
θ
JA
1 m/s air flow
140
°C/W
θ
JA
3 m/s air flow
120
°C/W
Thermal Resistance Junction to Case
θ
JC
40
°C/W



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