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RTQ035P02FHA 数据表(PDF) 1 Page - Rohm |
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RTQ035P02FHA 数据表(HTML) 1 Page - Rohm |
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1 / 8 page ![]() RTQ035P02 Transistor Rev.A 1/4 2.5V Drive Pch MOS FET RTQ035P02 Structure Silicon P-channel MOSFET Features 1) Low On-resistance.(80mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) Applications DC-DC converter External dimensions (Unit : mm) Each lead has same dimensions TSMT6 0.4 (1) (5) (3) (6) (2) (4) 1pin mark 1.9 2.9 0.95 0.95 0~0.1 0.16 0.85 1.0MAX 0.7 Abbreviated symbol : TL Packaging specifications Taping RTQ035P02 Type TR 3000 Package Basic ordering unit (pieces) Code Equivalent circuit (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗2 ∗1 (6) (1) (5) (2) (4) (3) Absolute maximum ratings (Ta=25°C) Parameter V V A A W °C A A °C VDSS VGSS IS PD Tch ID ISP IDP Tstg Symbol −20 ±12 −1 −4 1.25 150 −55 to +150 Limits Unit ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Drain−source voltage Gate−source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature Continuous Pulsed Continuous Pulsed ∗1 ∗1 ∗2 ±3.5 ±17.5 Thermal resistance °C / W Rth (ch-a) 100 Parameter Symbol Limits Unit Channel to ambient ∗ Mounted on a ceramic board. ∗ RTQ035P02FHA RTQ035P02FHA RTQ035P02FHA AEC-Q101 Qualified |
类似零件编号 - RTQ035P02FHA |
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类似说明 - RTQ035P02FHA |
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