2

IXDD415SI

Parameter

Value

Supply Voltage

30V

All Other Pins

-0.3V to VCC + 0.3V

Power Dissipation

≤25 oC

1W

≤25 oC

12W

Derating Factors (to Ambient)

28-Pin SOIC

0.1W/oC

Storage Temperature

-65oC to 150oC

Soldering Lead Temperature

(10 seconds maximum)

300oC

Unless otherwise noted, T

≤ V

All voltage measurements with respect to GND. IXDD415 configured as described in Test Conditions.

Electrical Characteristics

Operating Ratings

Parameter

Value

Maximum Junction Temperature

150oC

Operating Temperature Range

-40oC to 85oC

Thermal Impedance (Junction To Case)

28 Pin SOIC (SI) (

0.75oC/W

Specifications Subject To Change Without Notice

S y m b ol

Pa r a m e te r

T e s t C o n d itio ns

M in

T y p

M a x

U n its

H igh in pu t v o lta g e

3.5

V

Low in p u t v o ltag e

0.8

V

In put volta ge r ange

-5

V

In put current

0V

≤ V

-1 0

1 0

µ A

H igh o u tp ut v o ltage

V

Low o u tp u t v o ltag e

0.02 5

V

O u tp ut re s is tan c e

@ O u tp u t H ig h

0.8

1.2

Ω

O u tp ut re s is tan c e

@ O u tp u t L o w

0.8

1.2

Ω

P e ak output c u rre nt

15

A

C o n tin u o us ou tp ut

c u rre n t

2

A

E n a b le vo ltag e ra ng e

-0 .3

V c c + 0.3

V

H igh E n in put voltage

2/3 V c c

V

Low E n in p u t v o ltag e

1/3 V c c

V

M a xim u m freq uen c y

lim ite d b y p a c k a g e p o w e r d is s ip a tio n

45

M H z

R is e tim e

(1 )

2.5

4.5

ns

ns

F a ll tim e

(1 )

2.0

3.5

ns

ns

O n -tim e p rop agatio n

de la y

(1 )

32

38

ns

O ff-tim e propa gatio n

de la y

(1 )

29

35

ns

M in im u m puls e w idth

5.0

7.0

ns

ns

E n a b le to output lo w

de la y tim e

Vc c = 1 5 V

8 0

n s

E n a b le to output hig h

de la y tim e

V c c=1 5 V

17 0

ns

D isable to outpu t lo w

D isable dela y tim e

Vc c = 1 5 V

3 0

n s

D isable to output hig h

D isable dela y tim e

Vc c = 1 5 V

3 0

n s

P o w e r supp ly v o lta g e

8

15

30

V

P o w e r supp ly curre n t

1

0

3

10

10

mA

µ A

µ A