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LMV712LD 数据表(PDF) 11 Page - National Semiconductor (TI) |
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LMV712LD 数据表(HTML) 11 Page - National Semiconductor (TI) |
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11 / 14 page ![]() Application Information (Continued) In Figure 3, the isolation resistor R ISO and the load capacitor C L form a pole to increase stability by adding more phase margin to the overall system. The desired performance de- pends on the value of R ISO. The bigger the RISO resistor value, the more stable V OUT will be. But the DC accuracy is degraded when the R ISO gets bigger. If there were a load resistor in Figure 3, the output voltage would be divided by R ISO and the load resistor. The circuit in Figure 4 is an improvement to the one in Figure 3 because it provides DC accuracy as well as AC stability. In this circuit, R F provides the DC accuracy by using feed-forward techniques to connect V IN to RL.CF and RISO serve to counteract the loss of phase margin by feeding the high frequency component of the output signal back to the amplifier’s inverting input, thereby preserving phase margin in the overall feedback loop. Increased capacitive drive is possible by increasing the value of C F. This in turn will slow down the pulse response. Latchup CMOS devices tend to be susceptible to latchup due to their internal parasitic SCR (silicon controlled rectifier) effects. The input and output pins look similar to the gate of the SCR. There is a minimum current required to trigger the SCR gate lead. The LMV712 is designed to withstand 150mA surge current on all the pins. Some resistive method should be used to isolate any capacitance from supplying excess cur- rent to the pins. In addition, like an SCR, there is a minimum holding current for any latchup mode. Limiting current to the supply pins will also inhibit latchup susceptibility. 10137032 FIGURE 3. 10137033 FIGURE 4. www.national.com 11 |
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