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2SD617 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD617 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD617 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB=0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.0 V ICBO Collector Cutoff Current VCB=120V; IE=0 0.2 mA ICEO Collector Cutoff Current VCE= 100V;IB= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE-1 DC Current Gain IC= 1A; VCE= 4V 2500 hFE-2 DC Current Gain IC= 3A ; VCE= 4V 1000 hFE-2 DC Current Gain IC= 8A ; VCE= 4V 750 |
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