High Power PIN Diodes

V16

MA4P MELF & HIPAX Series

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Features

 High Power Handling

 Low Loss / Low Distortion

 Voltage Ratings up to 1000 Volts

 Passivated Chip for Low Leakage Current

 Low Theta (θ) Due to Full Face Chip Bonding

 Leadless Low Inductance MELF Packages

 Various Package Options

 Available as Chips

 Fully RoHS Compliant

 Non-Magnetic Packages Available for MRI

Description

The MELF and HIPAX PIN diode series are

designed for usage in switch and attenuator

applications requiring high power handling and low

distortion.

These

diodes

incorporate

a

fully

passivated PIN diode chip resulting in an extremely

low

reverse

bias

leakage

current.

The

semiconductor technology utilized in the MELF and

HIPAX families draws on MACOM ’s substantial

experience in PIN diode design and wafer

fabrication. The result is a device which has a thick

I-region and long carrier lifetime while maintaining

low series resistance and capacitance values. The

chips of the MELF and HIPAX PIN diodes are

enclosed in a rugged ceramic package and is full

face bonded to metal pins on both the anode and

cathode. The result is a low loss PIN diode with low

thermal resistance due to symmetrical thermal

paths. The parts are offered in either magnetic or

non-magnetic, HIPAX (axial leaded) or MELF (Metal

Electrode Leadless Faced) surface mount packages

for MRI applications. The MELF is a rectangular

SMQ, package which is designed for high volume

tape and reel assembly. This easy to use package

design makes automatic pick and place, indexing

and assembly, extremely easy. The parallel flat sur-

faces are suitable for most key jaw or vacuum pick-

up techniques. All of the solderable surfaces are tin

plated and compatible with industry standard reflow

and vapor phase soldering processes. See Applica-

tion Note M538 for a typical solder reflow profile.

Many of MACOM’s HIPAX PIN diodes are also

available as chips. Please consult the “Silicon PIN

Chip Datasheet” for availability and specifications.

Absolute Maximum Ratings

1.Operation of this device above any one of these

parameters may cause permanent damage.

Parameter

Absolute Maximum

(See Tables)

Operating Chip Junction

Temperature

-55°C to +175°C

Storage Temperature

-55°C to +200°C

Installation Temperature

+280°C for 30 Seconds

ESD

Class 1A, HBM

Package Styles

Applications

HIPAX PIN diodes are designed for use in a wide

variety of switch and attenuator applications from

HF through UHF frequencies and at power levels

above 1 kW, CW. The internal chip as well as each

diode assembly has been comprehensively tested

and characterized to ensure predictable and

repeatable performance.

Design Recommendations

 Low Distortion Attenuators

MA4P4301B

 Surface Mount Switches

MA4P7101F

 Cellular Radio Antenna Switches

MA4P1200, MA4P1250

1072 & 1091

Notes

401 & 402