GaAs Flip Chip

Schottky Barrier Diodes

Rev. V9

MA4EXXXX Series

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Features

 Low Series Resistance

 Low Capacitance

 High Cutoff Frequency

 Silicon Nitride Passivation

 Polyimide Scratch Protection

 Designed for Easy Circuit Insertion

Description and Applications

The MA4E1317 single, MA4E1318 anti-parallel pair,

MA4E1319-1 reverse tee, MA4E1319-2 series tee

and MA4E2160 unconnected anti-parallel pair are

gallium arsenide flip chip Schottky barrier diodes.

These devices are fabricated on OMCVD epitaxial

wafers using a process designed for high device

uniformity and extremely low parasitics. The diodes

are fully passivated with silicon nitride and have an

additional layer of polyimide for scratch protection.

The protective coatings prevent damage to the

junction during automated or manual handling. The

flip chip configuration is suitable for pick and place

insertion. The high cutoff frequency of these diodes

allows use through millimeter wave frequencies.

Typical applications include single and double

balanced mixers in PCN transceivers and radios,

police radar detectors, and automotive radar

detectors.

The devices can be used through

80 GHz.

The MA4E1318 anti-parallel pair is designed for use

in

sub

harmonically

pumped

mixers.

Close

matching of the diode characteristics results in high

LO suppression at the RF input.

Ordering Information

Part Number

Package

MA4E1317

100 piece Die in Carrier

MADS-001317-1278HP

3000 piece Pocket Tape on Reel

MA4E1318

100 piece Die in Carrier

MADS-001318-1197HP

3000 piece Pocket Tape on Reel

MA4E1319-1

100 piece Die in Carrier

MA4E1319-2

100 piece Die in Carrier

MA4E2160

100 piece Die in Carrier

MA4E1317

MA4E1318

MA4E1319-1

MA4E1319-2

MA4E2160