If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage

6.0V

Storage Temperature

-65˚C to +150˚C

Input Voltage

−0.3V to V

Power Dissipation

Internally limited

ESD Susceptibility (Note 12)

2000V

ESD Susceptibility (Note 13)

200V

Junction Temperature

150˚C

Soldering Information

Small Outline Package

Vapor Phase (60 sec.)

215˚C

Infrared (15 sec.)

220˚C

See AN-450 “Surface Mounting and their Effects on

Product Reliability” for other methods of soldering

surface mount devices.

θ

20˚C/W

θ

80˚C/W

θ

2˚C/W

θ

41˚C/W

θ

54˚C/W

θ

59˚C/W

θ

93˚C/W

Operating Ratings

Temperature Range

T

−40˚C

≤TA ≤ 85˚C

Supply Voltage

2.7V

≤ V

Electrical Characteristics for Entire IC

(Notes 7, 10)

The following specifications apply for V

Symbol

Parameter

Conditions

LM4835

Units

(Limits)

Typical

(Note 14)

Limit

(Note 15)

V

DD

Supply Voltage

2.7

V (min)

5.5

V (max)

I

DD

Quiescent Power Supply Current

V

15

30

mA (max)

I

SD

Shutdown Current

V

0.7

2.0

µA (max)

V

IH

Headphone Sense High Input Voltage

4

V (min)

V

IL

Headphone Sense Low Input Voltage

0.8

V (max)

Electrical Characteristics for Volume Attenuators

(Notes 7, 10)

The following specifications apply for V

Symbol

Parameter

Conditions

LM4835

Units

(Limits)

Typical

(Note 14)

Limit

(Note 15)

C

RANGE

Attenuator Range

Gain with V

0

dB (max)

Attenuation with V

-81

-80

dB (min)

A

M

Mute Attenuation

V

-88

-80

dB (min)

V

-88

-80

dB (min)

Electrical Characteristics for Single-Ended Mode Operation

(Notes 7, 10)

The following specifications apply for V

Symbol

Parameter

Conditions

LM4835

Units

(Limits)

Typical

(Note 14)

Limit

(Note 15)

P

O

Output Power

THD = 1.0%; f = 1kHz; R

85

mW

THD=10%;f=1 kHz; R

95

mW

THD+N

Total Harmonic Distortion+Noise

V

A

0.065

%

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