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UESD4CUSB30G-AF5-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 UESD4CUSB30G-AF5-R
功能描述  Flow-Through Pin Mapping
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UESD4CUSB30G-AF5-R 数据表(HTML) 3 Page - Unisonic Technologies

  UESD4CUSB30G-AF5-R Datasheet HTML 1Page - Unisonic Technologies UESD4CUSB30G-AF5-R Datasheet HTML 2Page - Unisonic Technologies UESD4CUSB30G-AF5-R Datasheet HTML 3Page - Unisonic Technologies UESD4CUSB30G-AF5-R Datasheet HTML 4Page - Unisonic Technologies  
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UESD4CUSB30
Preliminary
TVS
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R223-027.a
ABSOLUTE MAXIMUM RATING over operating free-air temperature range (unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
IO Voltage (D+ and D- Pins)
0~6
V
EC 61000-4-5 Surge Current (tp=8/20μs)
D+, D- Pins
5
A
IEC 61000-4-5 Surge Peak Power (tp=8/20μs)
D+, D- Pins
45
W
Operating Free-Air Temperature Range
TA
-40~85
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
HANDLING RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Storage Temperature Range
TSTG
-65~125
°C
Human Body Model (HBM), Per
ANSI/ESDA/JEDEC JS-001, All Pins (Note 1)
-2.5~2.5
kV
Charged Device Model (CDM), per JEDEC
Specification JESD22-C101, All Pins (Note 2)
-1.5~1.5
kV
IEC 61000-4-2 Contact
Discharge
D+, D- Pins
-8~8
kV
Electrostatic
Discharge
IEC 61000-4-2 Air-Gap
Discharge
D+, D- Pins
V(ESD)
-9~9
kV
Notes: 1. JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control
process.
2. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control
process.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Operating Free-Air Temperature Range
TA
-40 ~ 85
°C
Operating Voltage
0 ~ 5.5
V
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Reverse Stand-Off Voltage (D+ and
D- Pins)
VRWM
5.5
V
Clamp Voltage
Vclamp
D+,D- Pins to Ground, IIO=1A
8
V
Current from IO Port to Supply Pins
IIO
VIO=2.5V, ID=8mA
0.01
0.1
μA
Diode Forward Voltage
VD
D+,D- Pins, VIO=2.5V,
Lower Clamp Diode, ID=8mA
0.6
0.8
0.95
V
Dynamic Resistance
Rdyn
D+,D- Pins I=1A
0.6
Capacitance IO to IO
CIO-IO
D+,D- Pins VIO=2.5V
0.05
pF
Capacitance IO to GND
CIO-GND
D+,D- Pins
VIO=2.5V
0.7
pF
Break-Down Voltage
VBR
IIO=1mA
7
V



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