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DS2720 数据表(PDF) 2 Page - Dallas Semiconductor |
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DS2720 数据表(HTML) 2 Page - Dallas Semiconductor |
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2 / 21 page ![]() DS2720 2 of 21 Two types of user-memory are provided on the DS2720 for battery information storage: EEPROM and lockable EEPROM. EEPROM memory saves important battery data in true nonvolatile (NV) memory that is unaffected by severe battery depletion, accidental shorts, or ESD events. Lockable EEPROM becomes ROM when locked to provide additional security for unchanging battery data. ORDERING INFORMATION PART DESCRIPTION DS2720AU DS2720 in 8-Lead mSOP in Bulk with VOVA = 4.275V DS2720AU/T&R DS2720 in 8-Lead mSOP in Tape-and-Reel with VOVA = 4.275V DS2720BU DS2720 in 8-Lead mSOP in Bulk with VOVB = 4.35V DS2720BU/T&R DS2720 in 8-Lead mSOP in Tape-and-Reel with VOVB = 4.35V DS2720CU DS2720 in 8-Lead mSOP in Bulk with VOVC = 4.30V DS2720CU/T&R DS2720 in 8-Lead mSOP in Tape-and-Reel with VOVC = 4.30V |
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