The AS7C513 and the AS7C3513 are high performance CMOS 524,288-bit Static Random Access Memory (SRAM) devices organized as

32,768 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.

performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory systems.

When CE is high, the devices enter standby mode. The AS7C513 and AS7C3513 are guaranteed not to exceed 28/18 mW power

consumption in CMOS standby mode. The devices also offer 2.0V data retention.

A write cycle is accomplished by asserting write enable (WE), (UB) and/or (LB), and chip enable (CE). Data on the input pins I/O0-I/O7,

and/or I/O8–I/O15, is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices

should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).

A read cycle is accomplished by asserting output enable (OE), (UB) and (LB), and chip enable (CE), with write enable (WE) high. The chips

drive I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is

active, or (UB) and (LB), output drivers stay in high-impedance mode.

The devices provide multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and

read. LB controls the lower bits, I/O0–I/O7, and UB controls the higher bits, I/O8–I/O15.

All chip inputs and outputs are TTL-compatible. The AS7C513 and AS7C3513 are packaged in common industry standard packages.

NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions outside those indicated in the operational sections of this specificati on is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect reliability.

Key: X = Don’t care; L = Low; H = High

Parameter

Device

Symbol

Min

Max

Unit

AS7C513

–0.50

+7.0

V

AS7C3513

–0.50

+5.0

V

Voltage on any pin relative to GND

–0.50

V

Power dissipation

–1.0

W

Storage temperature (plastic)

–65

+150

–55

+125

DC current into outputs (low)

–50

mA

CE

WE

OE

LB

UB

I/O0–I/O7

I/O8–I/O15

Mode

H

X

X

X

X

High Z

High Z

LH

L

L

H

High Z

LH

L

H

LHigh Z

LH

L

LLX

LLX

LH

High Z

LLX

H

L

High Z

L

L

H

X

H

X

X

H

X

H

High Z

High Z