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2SD862 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD862 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor iisc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD862 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 20 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 20 V V(BR)EBO Emitter-Base Breakdown Vltage IE= 1mA ; IC=0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A 0.5 V IEBO Emitter Cutoff Current VEB= 5V; IC= 0 200 μ A ICBO Collector Cutoff Current VCB= 20V; IE= 0 100 μ A hFE DC Current Gain IC= 100mA ; VCE= 2V 60 400 fT Current-Gain —Bandwidth Product IC= 0.5A ; VCE= 12V 80 MHz COB Output Capacitance IE= 0; VCB= 10V, ftest= 1MHz 75 pF |
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