MGS910 datasheet(1/4 Pages) MA-COM

部件名	MGS910

功能描述	GaAs Schottky Diodes

PDF	4 Pages

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制造商	MA-COM [M/A-COM Technology Solutions, Inc.]

网页	http://www.macomtech.com

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GaAs Schottky Diodes

Rev. V1

MGS8xx / MGS9xx Series

1

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

1

Features

 14 Different Configurations

 Beam Lead, Flip Chip, or Packaged Devices

 Hi-Rel Screening per MIL-PRF-19500 and MIL-

PRF-38534 Available

Description

The MGS series of GaAs Schottky diodes are

designed for optimum performance in millimeter

wave components operating to 60 GHz.

Beam Lead

Electrical Characteristics, TA = +25°C

Model

VF

mV

Δ VF

mV

VBR

V

CJ

pF

Δ CJ

pF

RS

Outline

Configuration

Min.

Max.

Min.

Max.

MGS901

Single Junction

650

750

—

5

0.06

—

7

GB110

MGS902

Anti-parallel Pair

650

750

20

5

0.10

—

7

GB210

MGS903

Series Tee

650

750

20

5

0.06

0.02

7

GB310

MGS904

4 Junction Ring-Quad

650

750

20

5

0.06

0.02

7

B85

MGS905

4 Junction Bridge-Quad

650

750

20

5

0.06

0.02

7

B86

MGS906

4 Junction Series-Tee

1300

1500

40

10

0.04

0.02

14

B91

MGS907

8 Junction Ring-Quad

1300

1500

40

10

0.04

0.02

14

B85

MGS907A

8 Junction Ring-Quad

1300

1500

40

10

0.06

0.02

12

B85

MGS907B

8 Junction Ring-Quad

1300

1500

40

10

0.08

0.02

10

B85

MGS908

8 Junction Quad

1300

1500

40

10

0.04

0.02

14

B86

MGS909

6 Junction Series-Tee

1800

2100

60

15

0.10

0.03

21

B90

MGS910

12 Junction Ring-Quad

1800

2100

60

15

0.10

0.03

21

B87

MGS911

12 Junction Bridge-Quad

1800

2100

60

15

0.10

0.03

21

B88

MGS912

Four Junction

2500

2900

—

20

0.03

—

28

B89

Test Conditions

IF = 1 mA

IR = 10 µA VR = 0 V, 1 MHz

IF = 5 mA

Flip Chip

Electrical Characteristics, TA = +25°C

Model

Configuration

VF

mV

Δ VF

mV

VBR

V

CJ

pF

Δ CJ

pF

RS

Outline

Min.

Max.

Min.

Max.

MGS801

Single Junction

650

750

—

5

0.05

—

7

GC110

MGS801A

Single Junction

650

750

—

5

0.075

—

5

GC110

MGS802

Anti-parallel Pair

650

750

20

5

0.10

—

7

GC210

MGS802A

Anti-parallel Pair

650

750

20

5

0.15

—

5

GC210

MGS803

Series Tee

650

750

20

5

0.06

0.02

7

GC310

Test Conditions

IF = 1 mA

IR = 10 µA VR = 0 V, 1 MHz

IF = 5 mA

类似零件编号 - MGS910

制造商	部件名	数据表	功能描述
Tyco Electronics	MGS	96Kb / 2P	GRID HIGH-PERFORMANCE RELAYS
Magnelab.	MGS-1800-0250	189Kb / 2P	Three-Phase 4-20 mA True-RMS AC Current Transducer MGS-1800
	MGS-1800-0400	189Kb / 2P	Three-Phase 4-20 mA True-RMS AC Current Transducer MGS-1800
	MGS-1800-0500	189Kb / 2P	Three-Phase 4-20 mA True-RMS AC Current Transducer MGS-1800
	MGS-1800-0800	189Kb / 2P	Three-Phase 4-20 mA True-RMS AC Current Transducer MGS-1800

More results

类似说明 - MGS910

制造商	部件名	数据表	功能描述
Alpha Industries	DMK2783-000	85Kb / 4P	GaAs Flip Chip Schottky Diodes
Agilent(Hewlett-Packard...	HSCH-9101	66Kb / 4P	GaAs Beam Lead Schottky Barrier Diodes
Tyco Electronics	MA4E2037	42Kb / 3P	GaAs Beam Lead Schottky Barrier Diodes
Tyco Electronics	MA4E1317	160Kb / 5P	GaAs Flip Chip Schottky Barrier Diodes
KODENSHI_AUK CORP.	KBM-N56-1	43Kb / 1P	GaAs Flip Chip Schottky Diodes
M/A-COM Technology Solu...	MA4E2037	69Kb / 4P	GaAs Beam Lead Schottky Diodes
Microsemi Corporation	MS8001	134Kb / 3P	GaAs Schottky Diodes
M/A-COM Technology Solu...	MA4E1317_V7	140Kb / 7P	GaAs Flip Chip Schottky Barrier Diodes
	MA4E2037_V3	69Kb / 4P	GaAs Beam Lead Schottky Diodes
	MA4E1317	653Kb / 6P	GaAs Flip Chip Schottky Barrier Diodes