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UH4KG-AL6-R 数据表(PDF) 2 Page - Unisonic Technologies |
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UH4KG-AL6-R 数据表(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UH4K DUAL TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R218-029.A ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA Power Dissipation PD 150 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=50μA 50 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA 50 V Emitter-Base Breakdown Voltage BVEBO IE=50μA 5 V Collector-Emitter Saturation Voltage VCE(SAT) IC=10mA, IB=1mA 0.3 V Collector Cut-off Current ICBO VCB=50V 0.5 μA Emitter Cut-off Current IEBO VEB=4V 0.5 μA DC Current Gain hFE VCE=5V, IC=1mA 100 300 600 Input Resistance R1 7 10 13 kΩ Current Gain Bandwidth Product fT VCE=10V, IE=-5mA, f=100MHz 250 MHz |
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