Specifications and information herin are subject to change without notice.

990401TM2fXHD

Absolute Maximum Ratings / Ta=25

°C

Drain to Source Voltage

Gate to Source Voltage

Drain Current(DC)

Drain Current(Pulse)

Allowable power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

V

V

A

A

W

W

°C

°C

Electrical Characteristics / Ta=25

°C

(N-channel)

(P-channel)

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain to Source

On State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Diode Forward Voltage

VDSS

VGSS

ID

IDP

PD

PT

Tch

Tstg

TENTATIVE

PW

≤10µS, dutycycle≤1%

Mounted on ceramic board

Mounted on ceramic board

unit

P-channel

N-channel

Features

• High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and

4-volt-drive N- / P- channel / MOSFETs.

• Low ON-state resistance.

30

±25

--3

--32

1.7

2.0

150

--55 to

±150

30

±25

5

32

min

typ

max

unit

30

1.0

5

V

µA

µA

V

S

m

Ω

m

Ω

pF

pF

pF

ns

ns

ns

ns

V

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on) 1

RDS(on) 2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VSD

ID=1mA

, VGS=0

VDS=30V

, VGS=0

VGS=

±20V , VDS=0

VDS=10V

, ID=1mA

VDS=10V

, ID=5A

ID=5A

, VGS=10V

ID=2A

, VGS=4V

VDS=10V

, f=1MHz

VDS=10V

, f=1MHz

VDS=10V

, f=1MHz

See Specified Test

Circuit

IS=5A

, VGS = 0

N- Channel Silicon MOS FET

High Speed Switching

8

50

84

460

340

85

13

300

30

50

1.0

100

±10

2.5

65

120

1.2

FW306

SANYO Electric Co., Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain to Source

On State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Diode Forward Voltage

min

typ

max

unit

--30

--1.0

3

V

µA

µA

V

S

m

Ω

m

Ω

pF

pF

pF

ns

ns

ns

ns

V

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on) 1

RDS(on) 2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VSD

ID=--1mA

, VGS=0

VDS=--30V

, VGS=0

VGS=

±20V , VDS=0

VDS=--10V

, ID=--1mA

VDS=--10V

, ID=--3A

ID=--3A

, VGS=--10V

ID=--2A

, VGS=--4V

VDS=--10V

, f=1MHz

VDS=--10V

, f=1MHz

VDS=--10V

, f=1MHz

See Specified Test

Circuit

IS=--3A

, VGS = 0

5

110

200

460

350

80

13

150

30

50

--1.0

--100

±10

--2.5

160

320

--1.2