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IPS031S 数据表(PDF) 2 Page - International Rectifier

部件名 IPS031S
功能描述  FULLY PROTECTED POWER MOSFET SWITCH
PDF  11 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IPS031S 数据表(HTML) 2 Page - International Rectifier

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IPS031(S)
2
www.irf.com
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application. Notes.
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Units
Vds (max) Continuous drain to source voltage
35
VIH
High level input voltage
4
6
VIL
Low level input voltage
0
0.5
Ids
Continuous drain current
Tamb=85
oC
(TAmbient = 85oC, IN = 5V, rth = 60oC/W, Tj = 125oC) IPS031
3.1
A
(TAmbient = 85oC, IN = 5V, rth = 80oC/W, Tj = 125oC) IPS031S
2.8
Rin
Recommended resistor in series with IN pin
0.2
5
k
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
1
µS
Fr-Isc (2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
V
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth 1
Thermal resistance free air
60
Rth 2
Thermal resistance junction to case
3
Rth 1
Thermal resistance with standard footprint
80
Rth 2
Thermal resistance with 1" square footprint
60
Rth 3
Thermal resistance junction to case
3
Thermal Characteristics
TO-220
D2PAK (SMD220)
oC/W
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25
oC unless otherwise specified). PCB mounting uses the standard foot-
print with 70
µm copper thickness.
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vds
Maximum drain to source voltage
47
Vin
Maximum input voltage
-0.3
7
Iin, max
Maximum IN current
-10
+10
mA
Isd cont.
Diode max. continuous current (1)
rth=62oC/W IPS031
2.8
TO220 free air
rth=5oC/W
IPS031
18
TO220 with Rth=5oC/W
rth=80oC/W IPS031S
2.2
SMD220 Std. footprint
Isd pulsed Diode max. pulsed current (1)
—18
Pd
Maximum power dissipation
(1)
(rth=62oC/W) IPS031
2
(rth=80oC/W) IPS031S
1.56
ESD1
Electrostatic discharge voltage (Human Body)
4
C=100pF, R=1500
Ω,
ESD2
Electrostatic discharge voltage (Machine Model)
0.5
C=200pF, R=0
Ω, L=10µH
T stor.
Max. storage temperature
-55
150
Tj max.
Max. junction temperature
-40
+150
Tlead
Lead temperature (soldering, 10 seconds)
300
V
W
A
oC
kV



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