SFH4715AS datasheet(2/14 Pages) OSRAM

2 / 14 page

2016-01-29

Version 1.3

SFH 4715AS

Maximum Ratings (TA = 25 °C)

Characteristics (TA = 25 °C)

Parameter

Symbol

Values

Unit

Operation and storage temperature range

op; Tstg

-40 ... 125

°C

Junction temperature

145

°C

Reverse voltage

Forward current

1500

Surge current

(tp = 2 ms, D = 0)

FSM

Power consumption

Ptot

5.8

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

VESD

Thermal resistance junction - solder point

RthJS

K / W

Note:

For the forward current and power consumption please see "maximum permissible forward current"

diagram

Parameter

Symbol

Values

Unit

Peak wavelength

F = 1 A, tp = 10 ms)

(typ)

peak

860

Centroid wavelength

(IF = 1 A, tp = 10 ms)

(typ)

centroid

850

Spectral bandwidth at 50% of Imax

(IF = 1 A, tp = 10 ms)

(typ)

∆λ

Half angle

(typ)

± 45

Dimensions of active chip area

(typ)

L x W

1 x 1

mm x

Rise and fall times of I

e ( 10% and 90% of Ie max)

F = 3 A, RL = 50 Ω)

(typ)

r / tf

11/ 14

Forward voltage

(IF = 1 A, tp = 10 ms)

(typ (max)) V

3.2 (≤ 3.6)

Forward voltage

(IF = 1.5 A, tp = 100 µs)

(typ (max)) VF

3.35 (≤ 3.85)

Forward voltage

F = 3 A, tp = 100 µs)

(typ (max)) VF

3.8 (≤ 4.7)

Reverse current

R = 5 V)

not designed for

reverse operation

µA

Total radiant flux

(IF = 1.5 A, tp = 100 µs)

(typ)

2000

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