SFH4716S datasheet(2/13 Pages) OSRAM

2 / 13 page

2016-01-29

Version 1.5

SFH 4716S

Maximum Ratings (TA = 25 °C)

Characteristics (TA = 25 °C)

Parameter

Symbol

Values

Unit

Operation and storage temperature range

op; Tstg

-40 ... 125

°C

Junction temperature

145

°C

Reverse voltage

Forward current

1000

Surge current

(tp ≤ 500 µs, D = 0)

FSM

Power consumption

Ptot

3.4

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

VESD

Thermal resistance junction - solder point

RthJS

K / W

Note:

For the forward current and power consumption please see "maximum permissible forward current"

diagram

Parameter

Symbol

Values

Unit

Peak wavelength

F = 1 A, tp = 10 ms)

(typ)

peak

860

Centroid wavelength

(IF = 1 A, tp = 10 ms)

(typ)

centroid

850

Spectral bandwidth at 50% of Imax

(IF = 1 A, tp = 10 ms)

(typ)

∆λ

Half angle

(typ)

± 75

Dimensions of active chip area

(typ)

L x W

1 x 1

mm x

Rise and fall times of I

e ( 10% and 90% of Ie max)

F = 5 A, RL = 50 Ω)

(typ)

r / tf

7/ 14

Forward voltage

(IF = 1 A, tp = 100 µs)

(typ (max)) V

2.9 (≤ 3.4)

Forward voltage

(IF = 5 A, tp = 100 µs)

(typ (max)) VF

3.5 (≤ 4.5)

Total radiant flux

F = 1A, tp = 100 µs)

(typ)

Φe

1030

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