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LM50 数据表(PDF) 2 Page - National Semiconductor (TI) |
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LM50 数据表(HTML) 2 Page - National Semiconductor (TI) |
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2 / 7 page ![]() Absolute Maximum Ratings (Note 1) Supply Voltage +12V to −0.2V Output Voltage (+V S + 0.6V) to −1.0V Output Current 10 mA Storage Temperature −65˚C to +150˚C Lead Temperature: SOT Package (Note 2): Vapor Phase (60 seconds) 215˚C Infrared (15 seconds) 220˚C T JMAX, Maximum Junction Temperature 150˚C ESD Susceptibility (Note 3): Human Body Model Machine Model 2000V 250V Operating Ratings (Note 1) Specified Temperature Range: T MIN to TMAX LM50C −40˚C to +125˚C LM50B −25˚C to +100˚C Operating Temperature Range −40˚C to +150˚C θ JA (Note 4) 450˚C/W Supply Voltage Range (+V S) +4.5V to +10V Electrical Characteristics Unless otherwise noted, these specifications apply for V S = +5 VDC and ILOAD = +0.5 µA, in the circuit of Figure 1. Boldface limits apply for the specified T A = TJ = TMIN to TMAX; all other limits TA = TJ = +25˚C, unless otherwise noted. Parameter Conditions LM50B LM50C Units (Limit) Typical Limit Typical Limit (Note 5) (Note 5) Accuracy T A = +25˚C ±2.0 ±3.0 ˚C (max) (Note 6) T A = TMAX ±3.0 ±4.0 ˚C (max) T A = TMIN +3.0, −3.5 ±4.0 ˚C (max) Nonlinearity (Note 7) ±0.8 ±0.8 ˚C (max) Sensor Gain +9.7 +9.7 mV/˚C (min) (Average Slope) +10.3 +10.3 mV/˚C (max) Output Resistance 2000 4000 2000 4000 Ω (max) Line Regulation +4.5V ≤ V S ≤ +10V ±0.8 ±0.8 mV/V (max) (Note 8) ±1.2 ±1.2 mV/V (max) Quiescent Current +4.5V ≤ V S ≤ +10V 130 130 µA (max) (Note 9) 180 180 µA (max) Change of Quiescent +4.5V ≤ V S ≤ +10V 2.0 2.0 µA (max) Current (Note 9) Temperature Coefficient of +1.0 +2.0 µA/˚C Quiescent Current Long Term Stability (Note 10) T J = 125˚C, for ±0.08 ±0.08 ˚C 1000 hours Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not apply when operating the device beyond its rated operating conditions. Note 2: See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” or the section titled “Surface Mount” found in a current National Semicon- ductor Linear Data Book for other methods of soldering surface mount devices. Note 3: Human body model, 100 pF discharged through a 1.5 k Ω resistor. Machine model, 200 pF discharged directly into each pin. Note 4: Thermal resistance of the SOT-23 package is specified without a heat sink, junction to ambient. Note 5: Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level). Note 6: Accuracy is defined as the error between the output voltage and 10mv/˚C times the device’s case temperature plus 500 mV, at specified conditions of volt- age, current, and temperature (expressed in ˚C). Note 7: Nonlinearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the device’s rated temperature range. Note 8: Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating effects can be com- puted by multiplying the internal dissipation by the thermal resistance. Note 9: Quiescent current is defined in the circuit of Figure 1 . Note 10: For best long-term stability, any precision circuit will give best results if the unit is aged at a warm temperature, and/or temperature cycled for at least 46 hours before long-term life test begins. This is especially true when a small (Surface-Mount) part is wave-soldered; allow time for stress relaxation to occur. The ma- jority of the drift will occur in the first 1000 hours at elevated temperatures. The drift after 1000 hours will not continue at the first 1000 hour rate. www.national.com 2 |
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