MBT3904DW1 datasheet(1/8 Pages) ONSEMI

部件名	MBT3904DW1

功能描述	Dual General Purpose Transistors

PDF	8 Pages

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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1 / 8 page

June, 2015 − Rev. 11

1

Publication Order Number:

MBT3904DW1T1/D

MBT3904DW1,

MBT3904DW2,

SMBT3904DW1,

NSVMBT3904DW1

Dual General Purpose

Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of

our popular SOT−23/SOT−323 three−leaded device. It is designed for

general purpose amplifier applications and is housed in the SOT−363

six−leaded surface mount package. By putting two discrete devices in

one package, this device is ideal for low−power surface mount

applications where board space is at a premium.

Features

• hFE, 100−300

• Low VCE(sat), ≤ 0.4 V

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

VCEO

40

Vdc

Collector − Base Voltage

VCBO

60

Vdc

Emitter − Base Voltage

VEBO

6.0

Vdc

Collector Current − Continuous

IC

200

mAdc

Electrostatic Discharge

ESD

HBM Class 2

MM Class B

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Package Dissipation (Note 1)

TA = 25°C

PD

150

mW

Thermal Resistance,

Junction−to−Ambient

RqJA

833

°C/W

Junction and Storage

Temperature Range

TJ, Tstg

− 55 to +150

°C

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

recommended footprint.

Device

Package

Shipping†

ORDERING INFORMATION

SOT−363/SC−88/

SC70−6

CASE 419B

Q1

(1)

(2)

(3)

(4)

(5)

(6)

Q2

MBT3904DW1T1

STYLE 1

www.onsemi.com

1

6

XX M

G

1

6

MARKING

DIAGRAM

XX = MA for MBT3904DW1T1G

MJ for MBT3904DW2T1G

M = Date Code

G = Pb−Free Package

(Note: Microdot may be in either location)

Q1

(1)

(2)

(3)

(4)

(5)

Q2

MBT3904DW2T1

STYLE 27

(6)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MBT3904DW1T1G,

MBT3904DW2T1G

SOT−363

(Pb−Free)

3000 /

Tape & Reel

SMBT3904DW1T1G

SOT−363

(Pb−Free)

3000 /

Tape & Reel

NSVMBT3904DW1T3G

SOT−363

(Pb−Free)

10000 /

Tape & Reel

类似零件编号 - MBT3904DW1

制造商	部件名	数据表	功能描述
Leshan Radio Company	MBT3904DW1T1	422Kb / 10P	Dual General Purpose Transistors
ON Semiconductor	MBT3904DW1T1	105Kb / 8P	Dual General Purpose Transistors September, 2004 ??Rev. 4
E-Tech Electronics LTD	MBT3904DW1T1	720Kb / 10P	Dual General Purpose Transistors
ON Semiconductor	MBT3904DW1T1	105Kb / 7P	Dual General Purpose Transistors May, 2005 - Rev. 5
ON Semiconductor	MBT3904DW1T1G	105Kb / 8P	Dual General Purpose Transistors September, 2004 ??Rev. 4

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