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LM567 数据表(PDF) 2 Page - National Semiconductor (TI) |
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LM567 数据表(HTML) 2 Page - National Semiconductor (TI) |
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2 / 8 page ![]() Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage Pin 9V Power Dissipation (Note 2) 1100 mW V 8 15V V 3 −10V V 3 V 4 + 0.5V Storage Temperature Range −65˚C to +150˚C Operating Temperature Range LM567H −55˚C to +125˚C LM567CH, LM567CM, LM567CN 0˚C to +70˚C Soldering Information Dual-In-Line Package Soldering (10 sec.) 260˚C Small Outline Package Vapor Phase (60 sec.) 215˚C Infrared (15 sec.) 220˚C See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices. Electrical Characteristics AC Test Circuit, T A = 25˚C, V + = 5V Parameters Conditions LM567 LM567C/LM567CM Units Min Typ Max Min Typ Max Power Supply Voltage Range 4.75 5.0 9.0 4.75 5.0 9.0 V Power Supply Current Quiescent R L = 20k 6 8 7 10 mA Power Supply Current Activated R L = 20k 11 13 12 15 mA Input Resistance 18 20 15 20 k Ω Smallest Detectable Input Voltage I L = 100 mA, fi =fo 20 25 20 25 mVrms Largest No Output Input Voltage I C = 100 mA, fi =fo 10 15 10 15 mVrms Largest Simultaneous Outband Signal to Inband Signal Ratio 66 dB Minimum Input Signal to Wideband Noise Ratio B n = 140 kHz −6 −6 dB Largest Detection Bandwidth 12 14 16 10 14 18 % of f o Largest Detection Bandwidth Skew 1 2 2 3 % of f o Largest Detection Bandwidth Variation with Temperature ±0.1 ±0.1 %/˚C Largest Detection Bandwidth Variation with Supply Voltage 4.75–6.75V ±1 ±2 ±1 ±5 %V Highest Center Frequency 100 500 100 500 kHz Center Frequency Stability (4.75–5.75V) 0 < T A < 70 −55 < T A < +125 35 ± 60 35 ± 140 35 ± 60 35 ± 140 ppm/˚C ppm/˚C Center Frequency Shift with Supply Voltage 4.75V–6.75V 4.75V–9V 0.5 1.0 2.0 0.4 2.0 2.0 %/V %/V Fastest ON-OFF Cycling Rate f o/20 f o/20 Output Leakage Current V 8 = 15V 0.01 25 0.01 25 µA Output Saturation Voltage e i = 25 mV, I8 =30mA e i = 25 mV, I8 = 100 mA 0.2 0.6 0.4 1.0 0.2 0.6 0.4 1.0 V Output Fall Time 30 30 ns Output Rise Time 150 150 ns Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func- tional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guar- antee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance. Note 2: The maximum junction temperature of the LM567 and LM567C is 150˚C. For operating at elevated temperatures, devices in the TO-5 package must be de- rated based on a thermal resistance of 150˚C/W, junction to ambient or 45˚C/W, junction to case. For the DIP the device must be derated based on a thermal resis- tance of 110˚C/W, junction to ambient. For the Small Outline package, the device must be derated based on a thermal resistance of 160˚C/W, junction to ambient. Note 3: Refer to RETS567X drawing for specifications of military LM567H version. www.national.com 2 |
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