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4AM11 数据表(PDF) 1 Page - Hitachi Semiconductor |
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4AM11 数据表(HTML) 1 Page - Hitachi Semiconductor |
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1 / 10 page ![]() 4AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –2.5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for H-bridged motor driver |
类似零件编号 - 4AM11 |
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类似说明 - 4AM11 |
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