| 数据搜索系统,热门电子元器件搜索 |
|
2SC3419 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SC3419 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SC3419 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base breakdown voltage IC=1mA ; IB=0 40 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 40 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC=500mA; IB= 50mA 0.8 V VBE(ON) Base-Emitter On Voltage IC= 500mA ; VCE= 2V 1.1 V ICBO Collector Cutoff Current VCB= 40V ; IE= 0 1.0 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 μ A hFE-1 DC Current Gain IC= 50mA ; VCE= 2V 70 240 hFE-2 DC Current Gain IC= 800mA ; VCE= 2V 13 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 10 pF fT Current-Gain—Bandwidth Product IE= -500mA; VCE= 2V 50 100 MHz hFE-1 Classifications O Y 70-140 120-240 |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |