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EMB53 数据表(PDF) 2 Page - Rohm |
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EMB53 数据表(HTML) 2 Page - Rohm |
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2 / 7 page ![]() EMB53 Datasheet l lAbsolute maximum ratings (Ta = 25°C) <For DTr1 and DTr2 in common> Parameter Symbol Values Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Power dissipation PD*1*2 150 mW Junction temperature Tj 150 ℃ Range of storage temperature Tstg -55 to +150 ℃ l lElectrical characteristics (Ta = 25°C) <For DTr1 and DTr2 in common> Parameter Symbol Conditions Values Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = -50μA -50 - - V Collector-emitter breakdown voltage BVCEO IC = -1mA -50 - - V Emitter-base breakdown voltage BVEBO IE = -50μA -5 - - V Collector cut-off current ICBO VCB = -50V - - -500 nA Emitter cut-off current IEBO VEB = -4V - - -500 nA Collector-emitter saturation voltage VCE(sat) IC = -5mA, IB = -0.5mA - -70 -150 mV DC current gain hFE VCE = -10V, IC = -5mA 100 - 600 - Input resistance R1 - 3.29 4.7 6.11 kΩ Transition frequency fT*3 VCE = -10V, IE = 5mA, f = 100MHz - 250 - MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 Characteristics of built-in transistor. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 2/4 20160119 - Rev.004 |
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