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EMB53 数据表(PDF) 2 Page - Rohm

部件名 EMB53
功能描述  General purpose Dual digital transistor
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ROHM [Rohm]
网页  http://www.rohm.com
标志 ROHM - Rohm

EMB53 数据表(HTML) 2 Page - Rohm

  EMB53_16 Datasheet HTML 1Page - Rohm EMB53_16 Datasheet HTML 2Page - Rohm EMB53_16 Datasheet HTML 3Page - Rohm EMB53_16 Datasheet HTML 4Page - Rohm EMB53_16 Datasheet HTML 5Page - Rohm EMB53_16 Datasheet HTML 6Page - Rohm EMB53_16 Datasheet HTML 7Page - Rohm  
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EMB53
 
               
Datasheet
l
lAbsolute maximum ratings (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-100
mA
Power dissipation
PD*1*2
150
mW
Junction temperature
Tj
150
Range of storage temperature
Tstg
-55 to +150
l
lElectrical characteristics (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Collector-base breakdown
voltage
BVCBO
IC = -50μA
-50
-
-
V
Collector-emitter breakdown
voltage
BVCEO
IC = -1mA
-50
-
-
V
Emitter-base breakdown voltage
BVEBO
IE = -50μA
-5
-
-
V
Collector cut-off current
ICBO
VCB = -50V
-
-
-500
nA
Emitter cut-off current
IEBO
VEB = -4V
-
-
-500
nA
Collector-emitter saturation voltage
VCE(sat)
IC = -5mA, IB = -0.5mA
-
-70
-150
mV
DC current gain
hFE
VCE = -10V, IC = -5mA
100
-
600
-
Input resistance
R1
-
3.29
4.7
6.11
Transition frequency
fT*3
VCE = -10V, IE = 5mA,
f = 100MHz
-
250
-
MHz
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 Characteristics of built-in transistor.
                                            
 
                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
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20160119 - Rev.004



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