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LM615 数据表(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 LM615
功能描述  LM615 Quad Comparator and Adjustable Reference
PDF  14 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LM615 数据表(HTML) 3 Page - National Semiconductor (TI)

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Electrical Characteristics
These specifications apply for Vb e GND e 0V Va e 5V VCM e VOUT e Va 2 IR e 100 mA FEEDBACK pin shorted to
GND unless otherwise specified Limits in standard typeface are for TJ e 25 C limits in boldface type apply over the
Operating Temperature Range
(Continued)
LM615AM
LM615M
Symbol
Parameter
Conditions
Typical
LM615AI
LM615I
Units
(Note 7)
Limits
Limits
(Note 8)
(Note 8)
VOLTAGE REFERENCE
(Note 9)
VR
Reference
1244
12365
12191
V min
Voltage
12515
12689
V max
(g06%)
(g2%)
D
VR
D
T
Average Drift
(Note 10)
18
80
150
ppm C
with Temperature
max
D
VR
kH
Average Drift
TJ e 40 C
400
ppmkH
with Time
TJ e 150 C
1000
ppmkH
D
VR
D
TJ
Hysteresis
(Note 11)
32
m
V C
D
VR
D
IR
VR Change
VR 100 mA b VR 17 mA
005
1
1
mV max
with Current
01
11
11
mV max
VR 10 mA b VR 100 mA
15
5
5
mV max
(Note 12)
20
55
55
mV max
R
Resistance
D
VR 10 mA to 01 mA 99 mA
02
056
056
X
max
D
VR 100 mAto17 mA 83 mA
06
13
13
X
max
D
VR
D
VRO
VR Change
VR VRO e VR b VR VRO e 63V
25
5
5
mV max
with VRO
28
10
10
mV max
D
VR
D
Va
VR Change
VR Vae 5V b VR Vae 36V
01
12
12
mV max
with Va Change
01
13
13
mV max
VR Vae 5V b VR Vae 3V
001
1
1
mV max
001
15
15
mV max
IFB
FEEDBACK
Vb s VFB s 506V
22
35
50
nA max
Bias Current
29
40
55
nA max
en
Voltage Noise
BW e 10 Hz to 10 kHz
30
m
VRMS
Note 1
Absolute maximum ratings indicate limits beyond which damage to the component may occur Electrical specifications do not apply when operating the
device beyond its rated operating conditions
Note 2
Input voltage above Va is allowed As long as one input pin voltage remains inside the common-mode range the comparator will deliver the correct output
Note 3
More accurately it is excessive current flow with resulting excess heating that limits the voltages on all pins When any pin is pulled a diode drop below
Vb a parasitic NPN transistor turns ON No latch-up will occur as long as the current through that pin remains below the Maximum Rating Operation is undefined
and unpredictable when any parasitic diode or transistor is conducting
Note 4
Shorting an Output to Vb will not cause power dissipation so it may be continuous However shorting an Output to any more positive voltage (including
Va) will cause 80 mA (typ) to be drawn through the output transistor This current multiplied by the applied voltage is the power dissipation in the output transistor
If the total power from all shorted outputs causes the junction temperature to exceed 150 C degraded reliability or destruction of the device may occur To
determine junction temperature see Note 5
Note 5
Junction temperature may be calculated using TJ e TA a PD iJA The given thermal resistance is worst-case for packages in sockets in still air For
packages soldered to copper-clad board with dissipation from one comparator or reference output transistor nominal iJA is 80 CW for the N package
Note 6
Human body model 100 pF discharge through a 15 kX resistor
Note 7
Typical values in standard typeface are for TJ e 25 C values in boldface type apply for the full operating temperature range These values represent the
most likely parametric norm
Note 8
All limits are guaranteed for TJ ea25 C (standard type face) or over the full operating temperature range (bold type face)
Note 9
VRO is the reference output voltage which may be set for 12V to 63V (see Application Information) VR is the VRO-to-FEEDBACK voltage (nominally
1244V)
Note 10
Average reference drift is calculated from the measurement of the reference voltage at 25 C and at the temperature extremes The drift in ppm C is
106
 DVR VR 25 C  DTJ where DVR is the lowest value subtracted from the highest VR 25 C is the value at 25 C and DTJ is the temperature range This
parameter is guaranteed by design and sample testing
Note 11
Hysteresis is the change in VRO caused by a change in TJ after the reference has been ‘‘dehysterized’’ To dehysterize the reference that is minimize the
hysteresis to the typical value its junction temperature should be cycled in the following pattern spiraling in toward 25 C 25 C 85 C b40 C 70 C 0 C 25 C
Note 12
Low contact resistance is required for accurate measurement
Note 13
A military RETS electrical test specification is available on request The LM615AMJ883 may also be procured as a Standard Military Drawing
3



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