AD8221ARZ-R7 datasheet(23/25 Pages) AD

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AD8221

Rev. C | Page 22 of 24

DIE INFORMATION

Die size: 1575 µm × 2230 µm

Die thickness: 381 µm

To minimize gain errors introduced by the bond wires, use Kelvin connections between the chip and the gain resistor, RG, by connecting

Pad 2A and Pad 2B in parallel to one end of RG and Pad 3A and Pad 3B in parallel to the other end of RG. For unity gain applications

where RG is not required, Pad 2A and Pad 2B must be bonded together as well as the Pad 3A and Pad 3B.

LOGO

Figure 53. Bond Pad Diagram

Table 7. Bond Pad Information

Pad No.

Mnemonic

Pad Coordinates1

X (µm)

Y (µm)

−IN

–379

+951

–446

+826

–615

+474

–619

+211

–490

–190

+IN

–621

–622

−VS

+635

–823

REF

+649

–339

VOUT

+612

+84

+VS

+636

+570

1 The pad coordinates indicate the center of each pad, referenced to the center of the die. The die orientation is indicated by the logo, as shown in Figure 53.

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