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IR22141 数据表(PDF) 21 Page - International Rectifier |
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IR22141 数据表(HTML) 21 Page - International Rectifier |
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21 / 28 page ![]() 21 IR2214/IR22141(SS) www.irf.com ADVANCE DATA Sizing tips Bootstrap supply The V BS voltage provides the supply to the high side driver circuitry of the IR2214. This supply sits on top of the V S voltage and so it must be floating. The bootstrap method to generate V BS supply can be used with IR2214. The bootstrap supply is formed by a diode and a capacitor connected as in figure 19. Figure 19: bootstrap supply schematic This method has the advantage of being simple and low cost but may force some limitations on duty-cycle and on-time since they are limited by the requirement to refresh the charge in the boot- strap capacitor. Proper capacitor choice can reduce drastically these limitations. Bootstrap capacitor sizing To size the bootstrap capacitor, the first step is to establish the minimum voltage drop ( ∆V BS) that we have to guarantee when the high side IGBT is on. bootstrap diode bootstrap capacitor VB VS VCC HOP HON SSDH DC+ bootstrap resistor COM VCC VBS VF VGE VCEon VFP ILOAD motor Rboot If V GEmin is the minimum gate emitter voltage we want to maintain, the voltage drop must be: under the condition: where V CC is the IC voltage supply, VF is boot- strap diode forward voltage, V CEon is emitter-col- lector voltage of low side IGBT and V BSUV- is the high-side supply undervoltage negative going threshold. Now we must consider the influencing factors contributing V BS to decrease: - IGBT turn on required Gate charge (Q G); - IGBT gate-source leakage current (I LK_GE); - Floating section quiescent current (I QBS); - Floating section leakage current (I LK) - Bootstrap diode leakage current (I LK_DIODE); - Desat diode bias when on (I DS- ) - Charge required by the internal level shifters (Q LS); typical 20nC - Bootstrap capacitor leakage current (I LK_CAP); - High side on time (T HON). I LK_CAP is only relevant when using an electrolytic capacitor and can be ignored if other types of capacitors are used. It is strongly recommend using at least one low ESR ceramic capacitor (paralleling electrolytic and low ESR ceramic may result in an efficient solution). Then we have: CEon GE F CC BS V V V V V − − − ≤ ∆ min − > BSUV GE V V min + + + + = QBS GE LK LS G TOT I I Q Q Q _ ( HON DS CAP LK DIODE LK LK T I I I I ⋅ + + + + − ) _ _ |
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