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IRLR7821 数据表(PDF) 1 Page - International Rectifier |
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IRLR7821 数据表(HTML) 1 Page - International Rectifier |
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1 / 11 page  www.irf.com 1 4/5/04 IRLR7821 IRLU7821 HEXFET® Power MOSFET Notes through
are on page 11 Applications Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use D-Pak IRLR7821 I-Pak IRLU7821 VDSS RDS(on) max Qg 30V 10m : 10nC PD - 94538B Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation g W PD @TC = 100°C Maximum Power Dissipation g Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 2.0 RθJA Junction-to-Ambient (PCB Mount) gà ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 -55 to + 175 75 0.50 37.5 Max. 65 f 47 f 260 ± 20 30 |
类似零件编号 - IRLR7821 |
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类似说明 - IRLR7821 |
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