LM6313 datasheet(3/10 Pages) NSC

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Electrical Characteristics (Continued)

Operational Amplifier AC Electrical Characteristics Unless otherwise specified all limits

guaranteed for TA e 25 C and Supply Voltage VS e g15V Boldface limits apply at temperature extremes VCM e 0V

RS e 50X the circuit configured as in Figure 1

Symbol

Parameter

Conditions

Typical

Units

GBW

Gain-Bandwidth Product

f e 30 MHz

MHz

Slew Rate

AV eb1 RL e 50X (Note 6)

250

V ms

PBW

Power Bandwidth

VOUT e 20 VPP

MHz

Settling Time

10V Step to 01% (See

Figure 2 )

200

Phase Margin

AV eb1 RL e 1kX CL e 50 pF

Deg

Differential Gain

Differential Phase

Deg

Input Noise Voltage

f e 10 kHz

nV SHz

Input Noise Current

f e 10 kHz

pA SHz

A1 DC Electrical Characteristics Unless otherwise specified all limits guaranteed for TA e 25 C and

Supply Voltage VS e g15V Boldface limits apply at temperature extremes VCM e 0V RS e 50X

Symbol

Parameter

Conditions

Typical

25 C0 Cto70 C

Units

Limit

AVOL

Large Signal Voltage Gain

VOUT e g10V RL e 2kX

650

300

250

VV (Min)

VOUT e g10V RL e %

6000

2500

2000

CMRR

Common-Mode

10V s VCM s a10V

dB (Min)

Rejection Ratio

PSRR

Power Supply

5V s gVS s a16V

dB (Min)

Rejection Ratio

ISC

Output Short

mA (Min)

Circuit Current

A1 AC Electrical Characteristics Unless otherwise specified all limits guaranteed for TA e 25 C and

Supply Voltage VS e g15V Boldface limits apply at temperature extremes RS e 50X

Symbol

Parameter

Conditions

Typical

25 C

Units

Limit

GBW

Gain-Bandwidth

f e 30 MHz

MHz (Min)

Slew Rate

AV ea1 RL e 100 kX g4VIN

250

150

V ms (Min)

2VOUT

Note 1

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur For guaranteed specifications and test conditions see the

Electrical Characteristics The guaranteed specifications apply only for the test condition listed Some performance characteristics may degrade when the device is

not operated under the listed test conditions

Note 2

In order to achieve optimum AC performance the input stage was designed without protective clamps Exceeding the maximum differential input voltage

results in reverse breakdown of the base-emitter junction of one of the input transistors Degradation of the input parameters (especially VOS IOS and Noise) is

proportional to the level of the externally limited breakdown current and the accumulated duration of the breakdown condition

Note 3

Continuous short-circuit operation of A1 at elevated temperature can result in exceeding the maximum allowed junction temperature of 125 C A2 contains

current limit and thermal shutdown to protect against fault conditions The device may be damaged by shorts to the supplies

Note 4

Human body model C e 100 pF RS e 1500X

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