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ADA4077-2ARZ-R7 数据表(PDF) 3 Page - Analog Devices

部件名 ADA4077-2ARZ-R7
功能描述  4 MHz, 7 nV/?숰z, Low Offset and Drift, High Precision Amplifiers
PDF  25 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADA4077-2ARZ-R7 数据表(HTML) 3 Page - Analog Devices

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Data Sheet
ADA4077-1/ADA4077-2/ADA4077-4
Rev. D | Page 3 of 25
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS, ±5 V
VSY = ±5.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
V
OS
ADA4077-1/ADA4077-2
B Grade, SOIC
10
25
µV
−40°C < T
A < +125°C
65
µV
A Grade, SOIC
15
50
µV
−40°C < T
A < +125°C
105
µV
A Grade, MSOP
50
90
µV
−40°C < T
A < +125°C
220
µV
ADA4077-4
A Grade, SOIC
15
50
µV
−40°C < T
A < +125°C
105
µV
A Grade, TSSOP
15
120
µV
−40°C < T
A < +125°C
220
µV
Offset Voltage Drift
∆V
OS/∆T
−40°C < T
A < +125°C
ADA4077-1/ADA4077-2
B Grade, SOIC
0.1
0.25
µV/°C
A Grade, SOIC
0.25
0.55
µV/°C
A Grade, MSOP
0.5
1.2
µV/°C
ADA4077-4
A Grade, SOIC
0.4
0.75
µV/°C
A Grade, TSSOP
0.5
1.2
µV/°C
Input Bias Current
I
B
−1
−0.4
+1
nA
−40°C < T
A < +125°C
−1.5
+1.5
nA
Input Offset Current
I
OS
−0.5
+0.1
+0.5
nA
−40°C < T
A < +125°C
−1
+1
nA
Input Voltage Range
−3.8
+3
V
Common-Mode Rejection Ratio
CMRR
V
CM = −3.8 V to +3 V
122
140
dB
V
CM = −3.8 V to +3 V, −40°C < TA < +85°C
120
dB
V
CM = −3.8 V to +2.8 V, 85°C < TA < 125°C
120
dB
Large Signal Voltage Gain
Av
R
L = 2 kΩ, VO = −3.0 V to +3.0 V
121
130
dB
−40°C < T
A < +125°C
120
dB
Input Capacitance
C
INCM
Common mode
5
pF
Input Resistance
R
IN
Common mode
70
GΩ
OUTPUT CHARACTERISTICS
Output Voltage High
V
OH
I
L = 1 mA
3.8
V
−40°C < T
A < +125°C
3.7
V
Output Voltage Low
V
OL
I
L = 1 mA
−3.8
V
−40°C < T
A < +125°C
−3.7
V
Output Current
I
OUT
V
DROPOUT < 1.6 V
±10
mA
Short-Circuit Current
I
SC
T
A = 25°C
22
mA
Closed-Loop Output Impedance
Z
OUT
f = 1 kHz, A
V = +1
0.05
Ω
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
V
S = ±2.5 V to ±18 V
123
128
dB
−40°C < T
A < +125°C
120
dB
Supply Current per Amplifier
I
SY
V
O = 0 V
400
450
µA
−40°C < T
A < +125°C
650
µA



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