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AD8505ACBZ-R7 数据表(PDF) 3 Page - Analog Devices

部件名 AD8505ACBZ-R7
功能描述  20 關A Maximum, Rail-to-Rail I/O, Zero Input Crossover Distortion Amplifiers
PDF  20 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

AD8505ACBZ-R7 数据表(HTML) 3 Page - Analog Devices

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AD8505/AD8506/AD8508
Rev. E | Page 3 of 20
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS—1.8 V OPERATION
VSY = 1.8 V, VCM = VSY/2, TA = 25°C, RL = 100 kΩ to GND, unless otherwise noted.
Table 1.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
0 V ≤ VCM ≤ 1.8 V
0.5
2.5
mV
−40°C ≤ TA ≤ +125°C
3.5
mV
Input Bias Current
IB
1
10
pA
−40°C ≤ TA ≤ +85°C
100
pA
−40°C ≤ TA ≤ +125°C
600
pA
Input Offset Current
IOS
0.5
5
pA
−40°C ≤ TA ≤ +85°C
50
pA
−40°C ≤ TA ≤ +125°C
100
pA
Input Voltage Range
−40°C ≤ TA ≤ +125°C
0
1.8
V
Common-Mode Rejection Ratio
CMRR
0 V ≤ VCM ≤ 1.8 V
85
100
dB
−40°C ≤ TA ≤ +85°C
85
dB
−40°C ≤ TA ≤ +125°C
80
dB
Large-Signal Voltage Gain
AVO
0.05 V ≤ VOUT ≤ 1.75 V,
RL = 100 kΩ to VCM
95
115
dB
−40°C ≤ TA ≤ +125°C
95
dB
Offset Voltage Drift
ΔV
OS
/
ΔT
−40°C ≤ TA ≤ +125°C
2.5
μV/°C
Input Resistance
RIN
220
GΩ
Input Capacitance, Differential Mode
CINDM
3
pF
Input Capacitance, Common Mode
CINCM
4.2
pF
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 100 kΩ to GND
1.78
1.79
V
−40°C ≤ TA ≤ +125°C
1.78
V
RL = 10 kΩ to GND
1.65
1.75
V
−40°C ≤ TA ≤ +125°C
1.65
V
Output Voltage Low
VOL
RL = 100 kΩ to VSY
2
5
mV
−40°C ≤ TA ≤ +125°C
5
mV
RL = 10 kΩ to VSY
12
25
mV
−40°C ≤ TA ≤ +125°C
25
mV
Short-Circuit Limit
ISC
VOUT = VSY or GND
±4.5
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VSY = 1.8 V to 5 V
100
110
dB
−40°C ≤ TA ≤ +85°C
100
dB
−40°C ≤ TA ≤ +125°C
95
dB
Supply Current per Amplifier
ISY
AD8506/AD8508
VOUT = VSY/2
16.5
20
μA
−40°C ≤ TA ≤ +125°C
25
μA
AD8505
VOUT = VSY/2
16.5
24
μA
−40°C ≤ TA ≤ +125°C
27.5
μA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 100 kΩ, CL = 10 pF, G = 1
13
mV/μs
Gain Bandwidth Product
GBP
RL = 1 MΩ, CL = 20 pF, G = 1
95
kHz
Phase Margin
ΦM
RL = 1 MΩ, CL = 20 pF, G = 1
60
Degrees
NOISE PERFORMANCE
Voltage Noise
en p-p
f = 0.1 Hz to 10 Hz
2.8
μV p-p
Voltage Noise Density
en
f = 1 kHz
45
nV/√Hz
Current Noise Density
in
f = 1 kHz
15
fA/√Hz



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