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ADRF5021BCCZN-R7 数据表(PDF) 5 Page - Analog Devices

部件名 ADRF5021BCCZN-R7
功能描述  Silicon SPDT Switch
PDF  12 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADRF5021BCCZN-R7 数据表(HTML) 5 Page - Analog Devices

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Data Sheet
ADRF5021
Rev. A | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
For recommended operating conditions, see Table 1.
Table 2.
Parameter
Rating
Supply Voltage
Positive
−0.3 V to +5.5 V
Negative
−2.75 V to +0.3 V
Digital Control Input Voltage
−0.3 V to VDD + 0.3 V
RF Input Power1 (f = 1 MHz to 30 GHz,
TCASE = 85°C)
Through Path
27 dBm
Terminated Path
25 dBm
Hot Switching
21 dBm
Temperature
Junction (TJ)
135°C
Storage
−65°C to +150°C
Reflow (MSL3 Rating)
260°C
Junction to Case Thermal Resistance, θJC
Through Path
420°C/W
Terminated Path
160°C/W
ESD Sensitivity
HBM
1 kV (Class 1)
1 For power derating at frequencies less than 1 MHz, see Figure 2 to Figure 4.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Only one absolute maximum rating can be applied at any one time.
POWER DERATING CURVES
4
–14
–12
–10
–8
–6
–4
–2
0
2
FREQUENCY (Hz)
10k
1M
100M
10G 30G
100k
10M
1G
TCASE = 85°C
Figure 2. Power Derating for Through Path vs. Frequency, TCASE = 85°C
4
–14
–12
–10
–8
–6
–4
–2
0
2
TCASE = 85°C
FREQUENCY (Hz)
10k
1M
100M
10G 30G
100k
10M
1G
Figure 3. Power Derating for Terminated Path vs. Frequency, TCASE = 85°C
4
–14
–12
–10
–8
–6
–4
–2
0
2
TCASE = 85°C
FREQUENCY (Hz)
10k
1M
100M
10G 30G
100k
10M
1G
Figure 4. Power Derating for Hot Switching vs. Frequency, TCASE = 85°C
ESD CAUTION



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