AD9364BBCZ datasheet(16/33 Pages) AD

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Data Sheet

AD9364

TYPICAL PERFORMANCE CHARACTERISTICS

800 MHZ FREQUENCY BAND

Figure 3. Rx Noise Figure vs. Frequency

Figure 4. RSSI Error vs. Input Power, LTE 10 MHz Modulation

(Referenced to −50 dBm Input Power at 800 MHz)

Figure 5. RSSI Error vs. Input Power, EDGE Modulation

(Referenced to −50 dBm Input Power at 800 MHz)

Figure 6. Rx EVM vs. Input Power, 64 QAM LTE 10 MHz Mode,

19.2 MHz REF_CLK

Figure 7. Rx EVM vs. Input Power, GSM Mode, 30.72 MHz REF_CLK (Doubled

Internally for RF Synthesizer)

Figure 8. Rx EVM vs. Interferer Power Level, LTE 10 MHz Signal of Interest with

PIN = −82 dBm, 5 MHz OFDM Blocker at 7.5 MHz Offset

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

700

750

800

850

900

FREQUENCY (MHz)

–40°C

+25°C

+85°C

–3

–2

–1

–100

–90

–80

–70

–60

–50

–40

–30

–20

–10

INPUT POWER (dBm)

–40°C

+25°C

+85°C

–3

–2

–1

–110 –100

–

INPUT POWER (dBm)

–40°C

+25°C

+85°C

–45

–40

–35

–30

–25

–20

–15

–10

–5

–75

–70

–65

–60

–55

–50

–45

–40

–35

–30

–25

INPUT POWER (dBm)

–40°C

+25°C

+85°C

–45

–40

–35

–30

–25

–20

–15

–10

–5

–90

–80

–70

–60

–50

–40

–30

–20

–10

INPUT POWER (dBm)

–40°C

+25°C

+85°C

–30

–25

–20

–15

–10

–5

–

INTERFERER POWER LEVEL (dBm)

–40°C

+25°C

+85°C

Rev. C | Page 15 of 32

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