RSQ035P03

Transistor

3/4

Electrical characteristic curves

Fig.1 Typical Transfer Characteristics

0

0.5

1.0

0.001

0.1

1

0.01

10

1.5

Gate

2.0

2.5

3.0

3.5

4.0

Ta

=125°C

75

°C

25

°C

−25°C

=−10V

pulsed

Fig.2 Static Drain

−Source On−State

Resistance

0.1

1

10

100

1000

10

Drain Current

−4.5V

−10V

−4V

vs.Drain Current

Ta

=25 C

pulsed

Fig.3 Static Drain

−Source On−State

Resistance

0.1

1

10

100

1000

10

Drain Current

vs.Drain Current

Ta=125

75

25

−25

=−10V

pulsed

C

C

C

C

Fig.4 Static Drain

−Source On−State

0.1

1

10

100

1000

10

Drain Current

Ta=125

75

25

−25

Resistance vs.Drain

−Current

C

C

C

C

=−4.5V

pulsed

Fig.5 Static Drain

−Source On−State

0.1

1

10

100

1000

10

Drain Current

Ta=125

75

25

−25

Resistance vs.Drain

−Current

=−4V

pulsed

C

C

C

C

0

0.5

1.0

1.5

Source

Fig.6 Reverse Drain Current

0.01

0.1

10

1

2.0

Ta=125

75

25

−25

vs.Source-Drain Voltage

=0V

pulsed

C

C

C

C

0.01

0.1

1

10

100

Drain

Fig.7 Typical Capactitance

10

100

10000

1000

vs.Drain

−Source Voltage

Ciss

Coss

Crss

Ta

=25 C

f

=1MHz

=0V

0.01

0.1

1

10

Drain Current

Fig.8 Switching Characteristics

1

10

1000

100

td

(off)

td

(on)

tr

tf

Ta

=25 C

=−15V

=−10V

=10Ω

pulsed

Fig.9 Dynamic Input Characteristics

01

0

4

8

6

Total Gate Charge

: Qg[nC]

23

4

5

1

2

3

5

6

7

78

9

10 11 12

Ta

=25 C

=−15V

=−3.5A

=10Ω

pulsed