SBP13005 datasheet(1/6 Pages) ETC

部件名	SBP13005

功能描述	High Voltage Fast-Switching NPN Power Transistor

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制造商	ETC [List of Unclassifed Manufacturers]

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Absolute Maximum Ratings

Symbol

Parameter

Value

Units

VCES

Collector-Emitter Voltage ( VBE = 0 )

700

V

VCEO

Collector-Emitter Voltage ( IB = 0 )

400

V

VEBO

Emitter-Base Voltage ( IC = 0 )

9.0

V

IC

Collector Current

4.0

A

ICM

Collector Peak Current ( tP ＜ 5 ms )

8.0

A

IB

Base Current

2.0

A

IBM

Base Peak Current ( tP ＜ 5 ms )

4.0

A

PC

Total Dissipation at TC = 25 °C

75

W

TSTG

Storage Temperature

- 65 ~ 150

°C

TJ

Max. Operating Junction Temperature

150

°C

Thermal Characteristics

Symbol

Parameter

Value

Units

RθJC

Thermal Resistance, Junction-to-Case

1.67

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

62.5

°C/W

SBP13005

Oct, 2002. Rev. 1

1/6

Features

◆

Very High Switching Speed (Typical 70ns@2.0A)

◆

Minimum Lot-to-Lot hFE Variation

◆

Low VCE(sat) (Typical 180mV@2.0A/0.5A)

◆

Wide Reverse Bias S.O.A

General Description

This devices is designed for high voltage, high speed switch-

ing characteristic required such as lighting system, switching

regulator, inverter and deflection circuit.

High Voltage Fast-Switching NPN Power Transistor

2.Collector

3.Emitter

1.Base

Symbol

○

TO-220

1

2

3

SemiWell Semiconductor

类似零件编号 - SBP13005

制造商	部件名	数据表	功能描述
SemiWell Semiconductor	SBP13005	700Kb / 6P	High Voltage Fast-Switching NPN Power Transistor
Shenzhen Winsemi Microe...	SBP13005-O	520Kb / 6P	High Voltage Fast-SwitchingNPN Power Transistor
SemiWell Semiconductor	SBP13005-O	160Kb / 4P	High Voltage Fast Switching NPN
SemiWell Semiconductor	SBP13005-S	160Kb / 4P	High Voltage Fast Switching NPN
Shenzhen Winsemi Microe...	SBP13005D	325Kb / 4P	High Voltage Fast-SwitchingNPN Power Transistor

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