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LM759 数据表(PDF) 3 Page - National Semiconductor (TI) |
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LM759 数据表(HTML) 3 Page - National Semiconductor (TI) |
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3 / 14 page ![]() LM759C Electrical Characteristics TJ e 25 C VCC e g15V unless otherwise specified Symbol Parameter Conditions Min Typ Max Units VIO Input Offset Voltage RS s 10 kX 10 60 mV IIO Input Offset Current 50 50 nA IIB Input Bias Current 50 250 nA ZI Input Impedance 025 15 MX ICC Supply Current 12 18 mA VIR Input Voltage Range Va b 2V to Vb Va b 2V to Vb V IOS Output Short Circuit Current lVCC–VOl e 30V g 200 mA IO PEAK Peak Output Current 30V s lVCC–VOl s 10V g 325 g 500 mA AVS Large Signal Voltage Gain RL t 50X VO e g10V 25 200 VmV TR Transient Response Rise Time RL e 50X AV e 10 300 ns Overshoot 10 % SR Slew Rate RL e 50X AV e 10 05 V ms BW Bandwidth AV e 10 10 MHz The following specifications apply for 0 s TJ s a125 C VIO Input Offset Voltage RS s 10 kX 75 mV IIO Input Offset Current 100 nA IIB Input Bias Current 400 nA CMRR Common Mode Rejection Ratio RS s 10 kX 70 100 dB PSRR Power Supply Rejection Ratio RS s 10 kX 80 100 dB AVS Large Signal Voltage Gain RL t 50X VO e g10V 25 200 VmV VOP Output Voltage Swing RL e 50X g 10 g 125 V 3 |
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