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ADuM7223CCCZ 数据表(PDF) 5 Page - Analog Devices |
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ADuM7223CCCZ 数据表(HTML) 5 Page - Analog Devices |
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5 / 17 page ![]() ADuM7223 Data Sheet Rev. A | Page 4 of 16 Parameter Symbol Min Typ Max Unit Test Conditions/Comments Channel-to-Channel Matching6 tPSKCD VDD2 = 12 V 1 8.5 ns CL = 2 nF VDD2 = 4.5 V 1 8.5 ns CL = 2 nF; A-Grade Only Output Rise/Fall Time (10% to 90%) tR/tF 1 12 24 ns CL = 2 nF, VDD2 = 12 V Dynamic Input Supply Current per Channel IDDI(D) 0.05 mA/Mbps VDD2 = 12 V Dynamic Output Supply Current per Channel IDDO(D) 1.65 mA/Mbps VDD2 = 12 V Refresh Rate fr 1.2 Mbps VDD2 = 12 V 1 Short-circuit duration less than 1 μs. Average power must conform to the limit shown under the Absolute Maximum Ratings. 2 The minimum pulse width is the shortest pulse width at which the specified timing parameter is guaranteed. 3 The maximum data rate is the fastest data rate at which the specified timing parameter is guaranteed. 4 tDLH propagation delay is measured from the time of the input rising logic high threshold, VIH, to the output rising 10% level of the VOx signal. tDHL propagation delay is measured from the input falling logic low threshold, VIL, to the output falling 90% threshold of the VOx signal. See Figure 16 for waveforms of propagation delay parameters. 5 tPSK is the magnitude of the worst-case difference in tDLH and/or tDHL that is measured between ADuM7223 units at the same operating temperature, supply voltages, and output load within the recommended operating conditions. See Figure 16 for waveforms of propagation delay parameters. 6 Channel-to-channel matching is the absolute value of the difference in propagation delays between any two channels with inputs on the same side of the isolation barrier. ELECTRICAL CHARACTERISTICS—3.3 V OPERATION All voltages are relative to their respective ground. 3.0 V ≤ VDD1 ≤ 3.6 V, 4.5 V ≤ VDD2 ≤ 18 V, unless stated otherwise. All minimum/maximum specifications apply over TJ = −40°C to 125°C. All typical specifications are at TA = 25°C, VDD1 = 3.3 V, VDD2 = 12 V. Switching specifications are tested with CMOS signal levels. Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments DC SPECIFICATIONS Input Supply Current, Quiescent IDDI (Q) 0.87 1.4 mA Output Supply Current per Channel, Quiescent IDDO (Q) 2.3 3.5 mA Supply Current at 1 MHz VDD1 Supply Current IDD1 (Q) 1.1 1.5 mA Up to 1 MHz, no load VDDA/VDDB Supply Current IDDA(Q), IDDB(Q) 5.6 8.0 mA Up to 1 MHz, no load Input Currents IIA, IIB −1 +0.01 +1 μA 0 V ≤ VIA, VIB ≤ VDD1 Logic High Input Threshold VIH 0.7 × VDD1 V Logic Low Input Threshold VIL 0.3 × VDD1 V Logic High Output Voltages VOAH, VOAH VDD2 − 0.1 VDD2 V IOx = −20 mA, VIx = VIxH Logic Low Output Voltages VOAL, VOBL 0.0 0.15 V IOx = 20 mA, VIx = VIxL Undervoltage Lockout, VDD1 Supply Positive Going Threshold VDD1UV+ 2.8 V Negative Going Threshold VDD1UV− 2.6 V Hysteresis VDD1UVH 0.2 V Undervoltage Lockout, VDD2 Supply Positive Going Threshold VDD2UV+ 4.1 4.4 V A-Grade Negative Going Threshold VDD2UV− 3.2 3.6 V A-Grade Hysteresis VDD2UVH 0.5 V A-Grade Positive Going Threshold VDD2UV+ 6.9 7.4 V B-Grade Negative Going Threshold VDD2UV− 5.7 6.2 V B-Grade Hysteresis VDD2UVH 0.7 V B-Grade Positive Going Threshold VDD2UV+ 10.5 11.2 V C-Grade Negative Going Threshold VDD2UV− 9.0 9.6 V C-Grade Hysteresis VDD2UVH 0.9 V C-Grade Output Short-Circuit Pulsed Current1 IOA(SC), IOB(SC) 2.0 4.0 A VDD2 = 12 V Output Source Resistance ROA, ROB 0.25 0.95 1.5 Ω VDD2 = 12 V, IOx = −250 mA Output Sink Resistance ROA, ROB 0.55 0.6 1.35 Ω VDD2 = 12 V, IOx = 250 mA |
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