© Semiconductor Components Industries, LLC, 1994

October, 2016 − Rev. 8

1

Publication Order Number:

MBD301/D

MBD301G,

MMBD301LT1G,

MMBD301LT3G,

SMMBD301LT3G

Silicon Hot-Carrier Diodes

Schottky Barrier Diodes

These devices are designed primarily for high−efficiency UHF and

VHF detector applications. They are readily adaptable to many other

fast switching RF and digital applications. They are supplied in an

inexpensive plastic package for low−cost, high−volume consumer

and industrial/commercial requirements. They are also available in a

Surface Mount package.

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

30

V

Forward Current (DC)

200 (Max)

mA

Total Device Dissipation

MBD301G

MMBD301LT1G, MMBD301LT3G,

SMMBD301LT3G

Derate above 25

°C

MBD301G

MMBD301LT1G, MMBD301LT3G,

SMMBD301LT3G

280

200

2.8

2.0

MW

mW/

°C

Operating Junction

Temperature Range

−55 to

+125

°C

Storage Temperature Range

−55 to

+150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

30 VOLTS

SILICON HOT−CARRIER

DETECTOR AND SWITCHING

DIODES

SOT−23 (TO−236)

CASE 318

STYLE 8

3

CATHODE

1

ANODE

2

CATHODE

1

ANODE

TO−92 2−Lead

CASE 182

STYLE 1

SOT−23

TO−92

MARKING DIAGRAMS

*Date Code orientation and/or overbar may vary

depending upon manufacturing location.

1

4T M

G

G

A

= Assembly Location

Y

= Year

W

= Work Week

4T

= Device Code (SOT−23)

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

MBD

301

AYW

G

G

SOT−23

TO−92

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