L1B 1 DIE ID & GM Vs VG

0.10

1.00

10.00

100.00

0

2

4

6

8

1012

14

1618

Vgs in Volts

Id

gM

L1B 1 DIE CAPACITANCE

1

10

100

1000

0

4

8

12

1620

2428

VDS IN VOLTS

Coss

Ciss

Crss

L870 1P P in vs P out F req= 500 MH z , V ds= 28V dc,

Idq= .4 A

0

9

18

27

36

45

0

0.5

1

1.5

2

2.5

3

P in in W a tts

11

12

13

14

15

16

17

18

19

20

P out

Gain

E ffic ienc y @ 30 watts = 55%

POLYFET RF DEVICES

POUT VS PIN GRAPH

CAPACITANCE VS VOLTAGE

ID & GM VS VGS

IV CURVE

PACKAGE DIMENSIONS IN INCHES

L8701P

L1B 1 DIE IV

0

2

4

6

8

10

12

04

8

12

16

20

VDS IN VOLTS

vg=2v

Vg=4v

Vg=6v

vg=8v

0

vg=12v

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:contact@polyfet.com URL:www.polyfet.com

REVISION 02/25/2016

Tolerance .XX +/-0.01

.XXX +/-.005 inches