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MBRF20100CTG 数据表(PDF) 2 Page - ON Semiconductor

部件名 MBRF20100CTG
功能描述  Switch-mode Schottky Power Rectifier
PDF  4 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

MBRF20100CTG 数据表(HTML) 2 Page - ON Semiconductor

  MBRF20100CTG Datasheet HTML 1Page - ON Semiconductor MBRF20100CTG Datasheet HTML 2Page - ON Semiconductor MBRF20100CTG Datasheet HTML 3Page - ON Semiconductor MBRF20100CTG Datasheet HTML 4Page - ON Semiconductor  
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MBRF20100CTG
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MAXIMUM RATINGS (Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(Rated VR), TC = 133°C
Total Device
IF(AV)
10
20
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC = 133°C
IFRM
20
A
Non−repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0
ms, 1.0 kHz)
IRRM
0.5
A
Operating Junction and Storage Temperature Range (Note 1)
TJ, Tstg
− 65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/
ms
RMS Isolation Voltage (t = 0.3 second, R.H.
≤ 30%, TA = 25°C) (Note 2)
Viso1
4500
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (Per Leg)
Rating
Symbol
Value
Unit
Maximum Thermal Resistance, Junction to Case
RqJC
3.5
°C/W
Lead Temperature for Soldering Purposes: 1/8
″ from Case for 5 Seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 10 Amp, TC = 25°C)
(iF = 10 Amp, TC = 125°C)
(iF = 20 Amp, TC = 25°C)
(iF = 20 Amp, TC = 125°C)
vF
0.85
0.75
0.95
0.85
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR
0.15
150
mA
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
2. Proper strike and creepage distance must be provided.
3. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2.0%.
Figure 1. Typical Forward Voltage Per Diode
Figure 2. Typical Reverse Current Per Diode
0.01
0.1
1.0
10
120
100
80
60
40
20
0
VR, REVERSE VOLTAGE (VOLTS)
TJ = 150°C
TJ = 125°C
TJ = 100°C
TJ = 25°C
0.5
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
1.0
3.0
5.0
10
20
50
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TJ = 25°C
100
°C
150
°C



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