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PI74FCT244ATS 数据表(PDF) 3 Page - Pericom Semiconductor Corporation |
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PI74FCT244ATS 数据表(HTML) 3 Page - Pericom Semiconductor Corporation |
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3 / 7 page ![]() 3 PS2011D 09/22/04 PI74FCT244T/2244T PI74FCT541T/2541T Octal Buffer/Line Drivers Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Note: Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other con- ditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. DC Electrical Characteristics (Over the Operating Range, TA = –40°C to +85°C, VCC = 5.0V ± 5%) Parameters Description Test Conditions(1) Min. Typ(2) Max. Units VOH Output HIGH Voltage VCC = Min., VIN = VIH or VIL IOH = –15.0mA 2.4 3.0 V VOL Output LOW Current VCC = Min., VIN = VIH or VIL IOL = 64mA 0.3 0.55 VOL Output LOW Current VCC = Min., VIN = VIH or VIL IOL = 12mA (25ΩSeries) 0.3 0.50 VIH Input HIGH Voltage Guaranteed Logic HIGH Level 2.0 VIL Input LOW Voltage Guaranteed Logic LOW Level 0.8 IIH Input HIGH Current VCC = Max. VIN = VCC 1 µA IIL Input LOW Current VCC = Max. VIN = GND –1 IOZH High Impedance VCC = MAX. VOUT = 2.7V 1 IOZL Output Current VOUT = 0.5V –1 VIK Clamp Diode Voltage VCC = Min., IIN = –18mA –0.7 –1.2 V IOFF Power Down Disable VCC = GND, VOUT = 4.5V — — 100 µA IOS Short Circuit Current VCC = Max.(3), VOUT = GND –60 –120 mA VH Input Hysteresis 200 Capacitance (TA = 25°C, f = 1 MHz) Parameters(4) Description Test Conditions Typ. Max. Units CIN Input Capacitance VIN = 0V 6 10 pF COUT Output Capacitance VOUT = 0V 8 12 Notes: 1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at Vcc = 5.0V, +25°C ambient and maximum loading. 3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second. 4. This parameter is determined by device characterization but is not production tested. Storage Temperature ............................................................. –65°C to +150°C Ambient Temperature with Power Applied .............................-40°C to +85°C Supply Voltage to Ground Potential (Inputs & Vcc Only) ...... –0.5V to +7.0V Supply Voltage to Ground Potential (Outputs & D/O Only) ... –0.5V to +7.0V DC Input Voltage ..................................................................... –0.5V to +7.0V DC Output Current................................................................................ 120mA Power Dissipation .................................................................................... 0.5W |
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