J5027-R datasheet(1/5 Pages) FAIRCHILD

部件名	J5027-R

功能描述	High Voltage and High Reliability

PDF	5 Pages

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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1 / 5 page

Rev. A, December 2003

NPN Silicon Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

Electrical Characteristics T

C=25°C unless otherwise noted

hFE Classification

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

1100

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current (DC)

3

A

ICP

Collector Current (Pulse)

10

A

IB

Base Current

1.5

A

PC

Collector Dissipation ( TC=25°C)

50

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVCBO

Collector-Base Breakdown Voltage

IC = 1mA, IE = 0

1100

V

BVCEO

Collector-Emitter Breakdown Voltage

IC = 5mA, IB = 0

800

V

BVEBO

Emitter-Base Breakdown Voltage

IE = 1mA, IC = 0

7

V

VCEX(sus)

Collector-Emitter Sustaining Voltage

IC = 1.5A, IB1 = -IB2 = 0.3A

L = 2mH, Clamped

800

V

ICBO

Collector Cut-off Current

VCB = 800V, IE = 0

10

µA

IEBO

Emitter Cut-off Current

VEB = 5V, IC = 0

10

µA

hFE1

hFE2

DC Current Gain

VCE = 5V, IC = 0.2A

VCE = 5V, IC = 1A

10

8

40

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 1.5A, IB = 0.3A

2

V

VBE(sat)

Base-Emitter Saturation Voltage

IC = 1.5A, IB = 0.3A

1.5

V

Cob

Output Capacitance

VCB = 10V, IE = 0, f = 1MHz

60

pF

fT

Current Gain Bandwidth Product

VCE = 10V, IC = 0.2A

15

MHz

tON

Turn On Time

VCC = 400V

IC = 5IB1 = -2.5IB2 = 2A

RL = 200Ω

0.5

µs

tSTG

Storage Time

3

µs

tF

Fall Time

0.3

µs

Classification

N

R

O

hFE1

10 ~ 20

15 ~ 30

20 ~ 40

FJP5027

High Voltage and High Reliability

• High Speed Switching

•Wide SOA

1.Base

2.Collector

3.Emitter

1

TO-220

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